Sumitomo Bakelite Company Limited

Research Institute of Innovative Technology for the Earth

Sumitomo Bakelight Co., Ltd.

Kenya Tachibana

Masahiro Wada

Hiroyuki Tanaka

Kensuke Nakamura

Daisuke Fujiwara

Hitoshi Kawaguchi

Yusuke Inoue

Hiroshi Hirose

Takuya Hatao

Hiroyuki Miyauchi

Teppei Itoh

Ryuichi Murata

There is provided a water-soluble additive composition including a cyclic carboxylic acid, the water-soluble additive composition satisfying at least one of the following Conditions 1 to 4: (Condition 1) component (A) the cyclic carboxylic acid, which is other than the following component (B1), and component (B1) one or more selected from the group consisting of gallic acid and an ester thereof are included; (Condition 2) the total content of Na+ and NH4+ is equal to or more than 100 ppm and equal to or less than 5000 ppm with respect to the cyclic carboxylic acid; (Condition 3) the total inorganic ion content (excluding hydrogen ions and hydroxyl group ions) is equal to or more than 300 ppm and equal to or less than 5000 ppm with respect to the cyclic carboxylic acid; and (Condition 4) component (A) the cyclic carboxylic acid, which is other than the following component (B2), and component (B2) an amino acid are included.

Water-soluble additive composition

A flip-chip semiconductor package includes a circuit board having a core layer and at least one buildup layer, a semiconductor device connected to the circuit board through a metal bump, and a cured member that is made of a sealing resin composition and enclosed between the semiconductor device and the circuit board. The coefficient of linear expansion at 25 to 75&#xb0; C. of the cured member is 15 to 35 ppm/&#xb0; C., the glass transition temperature of at least one buildup layer is 170&#xb0; C. or more, and the coefficient of linear expansion of at 25 to 75&#xb0; C. of the at least one buildup layer in the planar direction is 25 ppm or less. A highly reliable flip-chip semiconductor package, buildup layer material, core layer material, and sealing resin composition can be provided by preventing cracks and inhibiting delamination.

Semiconductor package, core layer material, buildup layer material, and sealing resin composition

The invention offers technology for suppressing damage to semiconductor devices due to temperature changes. When flip-chip mounting a silicon chip on a buildup type multilayer substrate having a structure with a thinned core, a core having a small coefficient of thermal expansion is used in the multilayer substrate, and the coefficient of thermal expansion and glass transition point of the underfill are appropriately designed in accordance with the thickness and coefficient of thermal expansion of the core. By doing so, it is possible to relieve stresses inside the semiconductor package caused by deformation of the multilayer substrate due to temperature changes, and thereby to suppress damage to the semiconductor package due to temperature changes.

Semiconductor device

The invention provides a connecting structure for a flip-chip semiconductor package in which cracking and delamination are inhibited or reduced to improve reliability, and in which the potential range of designs is expanded for the inner circuitry of circuit boards and the inductance is reduced. The invention is a connecting structure for a flip-chip semiconductor package, including: a circuit board having a core layer and at least one build-up layer; a semiconductor element connected via metal bumps to the circuit board; and a sealing resin composition with which gaps between the semiconductor element and circuit board are filled, wherein a cured product of the sealing resin composition has a glass transition temperature between 60&#xb0; C. and 150&#xb0; C. and a coefficient of linear expansion from room temperature to the glass transition temperature being between 15 ppm/&#xb0; C. and 35 ppm/&#xb0; C., a cured product of the build-up layer has a the glass transition temperature of at least 170&#xb0; C. and a coefficient of linear expansion in the in-plane direction up to the glass transition temperature being not more than 40 ppm/&#xb0; C., and stacked vias are provided in the build-up layer on at least one side of the core layer.

Connecting structure for flip-chip semiconductor package, build-up layer material, sealing resin composition, and circuit board

Growing community of inventors

Tokyo, Japan

Kenya Tachibana