Fuji Electric Co., Ltd.

Fuji Electric Holdings Co., Ltd.

Kenya Sakurai

Koji Kawaguchi

Makoto Kobayashi

Yukinori Kawamura

Toshio Hama

Masaharu Nishiura

Youichi Makifuchi

An organic EL display is constituted by providing a stress-relieving layer made of a material having a higher elastisity and a lower refractive index than an adhesive layer at edges of color-converting filters that are constituted from color filter layers alone, or color filter layers and color-converting layers, and are formed on a transparent supporting substrate. As a result, stress arising when bonding the color-converting filters and the organic light-emitting device together, or when there are changes in the environment in which the display is placed is absorbed by the stress-relieving layer, and hence the light-emitting device is not damaged, and moreover reflection at walls of the stress-relieving layer is promoted, and hence there is a reduction in the component of the light emitted by the light-emitting device that escapes sideways. An organic EL display having high reliability and high efficiency is thus provided.

Organic EL display

An organic EL device is disclosed that prevents degradation due to moisture and oxygen and that avoids the generation of dark spots even when a substrate covered with polymer or made of a resin is used. The organic EL device includes a substrate, a transparent electrode consisting of a plurality of electrode elements formed on the substrate, an organic EL layer formed on the transparent electrode, and a reflection electrode formed on the organic EL layer. The transparent electrode includes first and second transparent electrode elements. Each of the first transparent electrode elements is arranged alternately with each of the second transparent electrode elements. A side edge portion of each of the first transparent electrode elements overlaps a side edge portion of next second transparent electrode element through an insulation layer. The first transparent electrode elements are electrically insulated from the second transparent electrode elements.

Organic electroluminescent device with improved moisture protection

An organic EL display includes an organic EL device comprising lower electrodes, upper electrodes and an organic EL layer therebetween, and color-converting filter layers that absorb light emitted from the organic EL device and carry out color conversion, a layer having a color filter function of transmitting only the color of the light emitted from the organic EL device is provided between the color-converting filter layers and the organic EL device, whereby there is provided an organic EL display that has good display quality, with a high contrast ratio under illumination with a fluorescent lamp, sunlight or the like.

Organic EL display having color converting filters

A method and apparatus for manufacturing a color conversion filter. The method includes forming a color filter layer on a transparent substrate. A coloring matter layer containing color conversion coloring matter and an optical radical generating agent are formed on the substrate and the filter layer. The coloring matter layer is exposed to coloring matter decomposition light applied through the substrate and the filter layer. The coloring matter layer also is exposed to auxiliary ultraviolet light applied from the side of the coloring matter layer. This forms a color conversion layer at a position corresponding to the filter layer. The optical radical generating agent is heat vaporized. The color conversion coloring matter is decomposed by light whose wavelength is outside a range that the color filter layer transmits. The coloring matter decomposition light includes a wavelength component that decomposes the color conversion coloring matter. The color conversion layer emits, through wavelength profile conversion, light that the color filter layer transmits.

Method and apparatus for manufacturing a color conversion filter

A color-converting-function-possessing color filter and a method for its manufacture are disclosed. A simplified manufacturing process is provided that makes possible highly detailed patterning. The method of manufacturing the color-converting filter comprises a step of forming color filter layers on a transparent substrate, a step of forming a colorant layer containing a color-converting colorant on the color filter layers, and a step of exposing the colorant layer via the transparent substrate and the color filter layers using colorant-decomposing light, thus forming color-converting layers in positions corresponding to the color filter layers. In usage, a layered body consists of a transparent substrate, color filter layers and a colorant layer as a color-converting-function-possessing filter.

Color-converting filter and manufacturing method

A method and an apparatus for repairing short circuits between electrodes of a multi-color organic light-emitting display device. A multi-color organic light-emitting display device having a color-converting filter section is provided. Then a short-circuited part between electrodes in the device is eliminated by irradiating the short-circuited part with a laser beam. The laser irradiation is carried out from the side of the device on which the color-converting filter section is not present. The method is carried out in an environment in which the moisture content is below a certain threshold value such as a vacuum or a dry nitrogen atmosphere.

Method of repairing and apparatus for repairing multi-color organic light-emitting display device

In the case of a top emission structure color organic EL display in which are bonded together a substrate having thin film transistors formed thereon and a transparent substrate having color-converting filters formed thereon, an overcoat layer for adjusting the gap between the substrates and an overcoat layer for relieving stress are formed between the substrates without providing a space between the overcoat layers and the EL device, whereby there can be provided an organic EL display having high reliability, with the occurrence of voids that would have an adverse effect on the display performance being prevented, and the occurrence of thermal and mechanical stress being suppressed.

Organic el display

An organic EL display is formed by preparing an organic EL device substrate, and a combination of a transparent substrate and color conversion filter layers. An overcoat layer with a pillar is formed in a pillar mold formed by a stripping layer and a temporary substrate, and is adhered to the combination of the transparent substrate and the color conversion filter layer while curing the overcoat layer with the pillar at a predetermined temperature. The stripping layer is removed to detach the temporary substrate from the overcoat layer with the pillar. Finally, the overcoat layer with the pillar attached to the combination of the transparent substrate and the color conversion filter layers is attached to the organic EL device substrate.

Method of manufacturing organic EL display and color conversion filter substrate

A simplified method of manufacturing a color-converting filter is disclosed which permits highly detailed patterning. Color filter layers are formed on a transparent substrate, a colorant layer containing a color-converting colorant is formed on the color filter layers, and the colorant layer is exposed via the transparent substrate and the color filter layers using colorant-decomposing light. Color-converting layers are formed in positions corresponding to the color filter layers. The color-converting colorant is decomposed by light outside the wavelength region transmitted by the color filter layers. The colorant-decomposing light contains a wavelength component that decomposes the color-converting colorant, and the color-converting layers emit, through wavelength distribution conversion, light that will be transmitted by the color filter layers.

Method of manufacturing color-converting filter

A conductivity modulation type MOSFET (IGBT) including an n-type high resistance layer, p-type base regions selectively formed in a first major surface of the high resistance layer, n-type source regions formed in the surface of each base region, a p.sup.+ well region formed in a central region of each of the base regions, a channel in the base region between one of the n-type source regions and the high resistance layer, a gate electrode formed above the channel, an emitter electrode formed in contact with the p.sup.+ well region and the n-type source region, a gate insulating film formed between the gate electrode and the channel, and a metal electrode formed in contact with a second major surface of the high resistance layer opposite the first major source, the electrode forming a Schottky barrier junction.

Method for manufacturing a conductivity modulation MOSFET

A conductivity modulation type MOSFET including a first region of a first conductivity type having a low impurity concentration, second regions of a second conductivity type selectively formed on the surface region of one side of the first region, third regions of the first conductivity type selectively formed on the surface region of the second regions, gate electrodes each formed above the surface region of the second region located between the first region and the third region, a plurality of gate insulating films interlayered between the gate electrodes and the surface region of the second regions, an emitter electrode in contact with both the second regions and the third regions, a fourth region of the second conductivity type having a high impurity concentration, formed adjoining to another side of the first region, fifth regions of the second conductivity type, selectively formed surrounding the fourth region, having a lower impurity concentration than that of the fourth region, and a collector electrode being in contact with both the fourth region and the fifth regions.

Method for making a conductivity modulation MOSFET

When bypassing a high voltage surge by externally installing a diode between a collector and a gate and protecting a circuit by turning on an IGBT, it is difficult to select a withstand voltage of the diode, because the withstand voltage of the IGBT must be higher with a certain margin. In the present invention, regions of an inverse conductivity type are formed in a high resistivity layer of an IGBT as in base region, and a transistor is formed together with a collector layer of an inverse conductivity type, which is connected between the collectors of an IGBT to be utilized as a clamping transistor. The breakdown voltage of this transistor is made lower than the breakdown voltage of a bipolar transistor of the IGBT main body. Then when the transistor breaks down, the gate-emitter capacity of the IGBT is charged and the IGBT is turned on, thus absorbing the high energy produced by an abnormal voltage into the chip and increasing the withstand capacity.

Conductivity-modulating MOSFET

A MOS semiconductor device having a surge protecting circuit comprising a semiconductor substrate having a major surface, a plurality of electrodes overlying the major surface, a MOS circuit in the major surface, and a bidirectional semiconductor surge absorber coupled between the gate of the MOS circuit and a reference electrode contacting the major surface of the substrate. In another embodiment, the MOS semiconductor device further comprises a bidirectional Zener diode connected in series with the bidirectional semiconductor surge absorber.

Growing community of inventors

Nagano, Japan

Kenya Sakurai