Renesas Technology Corp.

Renesas Electronics Corporation

Hitachi Power Semiconductor Device, Ltd.

Hitachi Chemical Company, Ltd.

Kenya Kawano

Naotaka Tanaka

Yuji Shirai

Chiko Yorita

Ichio Shimizu

Kisho Ashida

Yu Hasegawa

Yasuo Osone

Seiichi Tomoi

Akira Nagai

Yukihiro Sato

Toshiyuki Hata

Tetsuya Ishimaru

Yuichi Machida

Hiroshi Okabe

Hisashi Tanie

Akira Muto

Naoki Takeda

Masaaki Yasuda

Hirokazu Nakajima

Nae Hisano

Satoru Konishi

Hiroshi Shintani

Shinichi Kurita

Yu Harubeppu

Takeshi Terakawa

Tomohiro Onda

Koji Tasaki

Tsuneo Endou

Provided is a highly reliable semiconductor device capable of reducing stress generated in a semiconductor element even when a highly elastic joining material such as a Pb-free material is used in a power semiconductor having a double-sided mounting structure. The semiconductor device includes a semiconductor element including a gate electrode only on one surface, an upper electrode connected to the surface of the semiconductor element on which the gate electrode is provided, and a lower electrode connected to a surface opposite to the surface of the semiconductor element on which the gate electrode is provided. A connection end portion of the upper electrode with the surface of the semiconductor element on which the gate electrode is provided is located inside an end portion of the surface of the semiconductor element on which the gate electrode is provided, and a connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside an end portion of the opposite surface of the semiconductor element.

Semiconductor device including a semiconductor element with a gate electrode on only one surface

Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body; the lead header is connected to a second surface of the electronic circuit body; the electronic circuit body is integrally covered by resin, including a transistor circuit chip having a switching element, a control circuit chip for controlling the switching element, a drain frame, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.

Semiconductor device and alternator using same

Provided is an electronic device having a semiconductor device and a mounting board. The semiconductor device has a die pad, a semiconductor chip on the die pad, a coupling member coupling the die pad to the semiconductor chip, and a semiconductor package member covering the upper portion of the semiconductor chip and the side surface of the die pad. In this semiconductor device, the plane area of the coupling member coupling the mounting board to the die pad is smaller than the plane area of the lower surface of the die pad exposed from the semiconductor package material. This makes it possible to reduce separation between the die pad and the semiconductor chip resulting from cracks, due to temperature cycling, of the coupling member present between the die pad and the semiconductor chip.

Electronic device and semiconductor device

In a method of manufacturing a semiconductor device, a second wiring substrate is stacked over a first wiring substrate using a conductive paste, where each wiring substrate has mounted thereon an electronic component. The conductive paste is hardened to form a metal column which forms an electrical connection between the first wiring substrate and the second wiring substrate. The wiring substrates are sealed with a resin. The semiconductor device can be downsized, thinned, and made highly reliable, and its manufacturing cost can be reduced. By using conductive paste for the electrical connection between the wiring substrates, a connecting pitch can be smaller than that in a connecting method of using a solder ball including Cu core, and a connection at low temperature can be achieved. Also, by coating the conductive paste by a print-coating or dispense-coating method, manufacturing is simplified and the manufacturing cost is reduced.

Semiconductor device and method of manufacturing the same

Coupling reliability of a passive component is improved to increase the reliability of a semiconductor device. A first through hole is formed in a first electrode part of a first plate-like lead, and a second through hole is formed in a second electrode part of a second plate-like lead. As a result, at the first electrode part of the first plate-like lead, one external terminal of the passive component can be coupled to the first electrode parts on both sides of the first through hole while being laid across the first through hole. Also, at the second electrode part of the second plate-like lead, the other external terminal of the passive component can be coupled to the second electrode parts on both sides of the second through hole while being laid across the second through hole. Accordingly, at central portions both in the longitudinal and width directions of the passive component, the passive component is surrounded by sealing members. As a result, thermal stress applied to jointing materials such as solder can be reduced, improving the reliability of the semiconductor device (semiconductor package).

Semiconductor device

A semiconductor device is provided with connection reliability between a bump electrode and a substrate electrode. An elastic modulus of an adhesive material used to electrically connect a metal bump and an interconnect pattern, and sealing the circuit surface of an LSI chip, after thermosetting is Ea; an elastic modulus of an insulating material of a packaging substrate surface layer after thermosetting is Eb; an elastic modulus of a core material, if used, is Ec, and the following rational expression is satisfied at normal temperature or a thermal contact bonding temperature of the adhesive material: at least Ea&#x3c;Eb&#x3c;Ec, preferably &#x2153;Eb&#x3c;Ea&#x3c;Eb&#x3c;3Ea(&#x3c;Ec). With this arrangement, a stable connection state can be attained irrespective of the level of the contact bonding load or fluctuations of it upon mass production and, therefore, high yield can be attained at low cost.

Semiconductor device and multilayer substrate therefor

Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.

A semiconductor device capable of reducing the thermal resistance in a flip chip packaging structure while achieving both the high radiation performance and manufacturing readiness without increasing the manufacturing cost is provided. In a semiconductor device having a semiconductor circuit for power amplification and a control circuit of the semiconductor circuit laminated on a multilayer circuit board, the semiconductor circuit for power amplification and the control circuit are aligned in parallel on the same semiconductor element, and the semiconductor element is flip-chip connected on the multilayer circuit board. Further, a second semiconductor element mounted in addition to the first semiconductor element and all components and submodules are flip-chip connected. Also, a plurality of bumps are united in order to improve the radiation performance and thermal vias of the multilayer circuit board are formed in second and lower layers of the wiring layers in the multilayer circuit board.

A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.

Semiconductor chip, electrically connections therefor

Growing community of inventors

Hitachinaka, Japan

Kenya Kawano