Tokyo Electron Limited

Kenya Iwasaki

Hiroshi Nishikawa

Masahiro Yamada

Eiichi Nishimura

Tsuyoshi Moriya

Satoshi Tanaka

Toshiya Matsuda

Masaaki Miyagawa

Tadashi Mitsunari

A temperature measurement substrate according to an embodiment of the present disclosure includes: a substrate which is any one of a semiconductor wafer and a substrate for a flat panel display; and at least one optical fiber laid on a surface of the substrate and having a first pattern portion and a second pattern portion formed more densely than the first pattern portion.

Temperature measurement substrate and temperature measurement system

A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes separating each of the semiconductor devices or semiconductor integrated circuits. Each of the separated semiconductor devices or semiconductor integrated circuits is non-rectangular shaped, and the step of separating each of the semiconductor devices or semiconductor integrated circuits is performed by dry etching. A test device is formed on an area of a groove width required for separating the semiconductor devices or semiconductor integrated circuits, and the semiconductor devices or semiconductor integrated circuits are separated without a waste of space except for the area of the groove width required for separating the semiconductor devices or semiconductor integrated circuits, with the test device being separated from the semiconductor devices or semiconductor integrated circuits.

Method for separating and transferring IC chips

A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes forming a mask pattern on a surface of the wafer, and separating each of the semiconductor devices or semiconductor integrated circuits along the mask pattern formed on the surface of the wafer. The mask pattern is a repeated pattern without having a lattice line shape, and the step of separating each of the semiconductor devices or semiconductor integrated circuits is performed by plasma etching.

A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes: forming, on a surface of the wafer, a mask layer through which a line-shaped pattern to be removed for separating the semiconductor devices or semiconductor integrated circuits is exposed; and etching the exposed pattern to a depth equal to or larger than about &#x2154; of a thickness of the wafer. The line-shaped pattern is formed so as to prevent a test device formed on a gap between the semiconductor devices or semiconductor integrated circuits from remaining on separated semiconductor devices or semiconductor integrated circuits.

[Problems] There are provided a chip separation method and a chip transfer method using features of dry etching. [Means for Solving the Problems] In the chip separation method, a multiple number of semiconductor devices or semiconductor integrated circuits are separated from a waferon which the multiple number of semiconductor devices or semiconductor integrated circuits are formed. The method includes forming, on a surface of the wafer, a mask layer through which a line-shaped pattern to be removed for separating the semiconductor devices or semiconductor integrated circuits is exposed; and etching the exposed pattern to a depth equal to or larger than about &#x2154; of a thickness of the wafer. One group of separated semiconductor devices or semiconductor integrated circuits has a distinguishable shape from another group of separated semiconductor devices or semiconductor integrated circuits.

A worker management system, which includes a plantdivided into a plurality of work areas each in correspondence to specific task contents, a databasehaving stored therein task identification information correlating each work areawith contents of tasks performed therein and worker detection sensorsinstalled in each work area, identifies the specific work area where a worker is currently located based upon outputs from the worker detection means and then identifies the task currently performed by the worker based upon the task identification information. Based upon the current task thus identified, a decision is made as to whether the worker should continue the current task or be assigned a new task and an instruction for task execution is issued to the worker. Therefore the identification of current tasks, the assignment of a new task and the task reassignment are facilitated to improve the work efficiency.

Worker management system, worker management apparatus and worker management method

A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

Method of processing substrate, and method of and program for manufacturing electronic device

A method of processing a substrate that enables the amount removed of an insulating film to be controlled precisely, without damaging an electronic device. An insulating film on a substrate of a solid-state imaging device is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The insulating film that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

Method of processing substrate, method of manufacturing solid-state imaging device, method of manufacturing thin film device, and programs for implementing the methods

A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface damaged layer and polishing remnants to be controlled easily. An insulating film on a substrate, which has been revealed by chemical mechanical polishing, is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The insulating film which has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

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Tokyo, Japan

Kenya Iwasaki