Mitsubishi Denki Kabushiki Kaisha

Taiyo Yuden Co., Ltd.

Fujitsu Media Devices Limited

Chiba University

Fujitsu Corporation

Denso Corporation

Tohoku University

Kenya Hashimoto

Masatsune Yamaguchi

Masanori Ueda

Motoyuki Tajima

Tatsuya Omori

Kenji Yoshida

Osamu Kawachi

Shusou Wadaka

Koichiro Misu

Tsutomu Nagatsuka

Takuya Abe

Kouji Murai

Tatsuya Ohmori

Tokihiro Nishihara

Shinji Taniguchi

Jun Tsutsumi

Shogo Inoue

Motoaki Hara

Masayoshi Esashi

Shuji Tanaka

Yasufumi Kaneda

Akihiko Teshigahara

Takao Iwaki

Jiansong Liu

Koji Ibata

Toshihiko Takahata

Naofumi Yokoyama

Kenji Matsuda

Motoyuki c/o Fujitsu Media Devices Ltd Tajima

Osamu c/o Fujitsu Media Devices Ltd Kawachi

Masanori c/o Fujitsu Media Devices Ltd Ueda

A surface acoustic wave (SAW) sensor includes a surface acoustic wave material and a comb-teeth electrode. The surface acoustic wave material is to be arranged at a place where the surface acoustic wave material is distorted by physical quantity such as stress. The comb-teeth electrode is arranged on the surface of the surface acoustic wave material to excite a surface acoustic wave to the surface acoustic wave material. The surface acoustic wave material has a sapphire board and a ScAlN film arranged on a surface of the sapphire board.

Surface acoustic wave sensor

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region.

Piezoelectric thin film resonator and filter

A surface acoustic wave device includes a pair of reflectors and an interdigital transducer having a cross electrode having a interdigitated portion and a dummy portion and a dummy electrode. The dummy electrode has a length different from the length of the dummy portion of the cross electrode arranged adjacent to the dummy electrode.

Elastic surface wave device comprising dummy electrodes

An acoustic wave device includes a ladder-type filter in which resonators are connected in a ladder configuration. In the acoustic wave device, series-connected resonators are connected in a parallel line in the ladder-type filter, and the resonators connected in the parallel line have mutually different resonance frequencies.

Acoustic wave device, duplexer, communication module, and communication apparatus

A surface acoustic wave filter capable of obtaining a low insertion loss and wide bandwidth characteristic is provided. The surface acoustic wave filter includes a piezoelectric substrate; a pair of reflective electrodes formed on the piezoelectric substrate; and a plurality of comb electrodes formed between the pair of reflective electrodes on the piezoelectric substrate, wherein, in regard to the neighboring two comb electrodes among the plurality of comb electrodes, an electrode pitch of one comb electrode is set so that continuously varying phases of surface acoustic waves respectively generated by the two comb electrodes are obtained in a gap opposite to an outermost finger electrode of the other neighboring comb electrode.

Surface acoustic wave filter

There is disclosed an acoustic wave apparatus, constructed in such a manner that a surface rotated in the range of 34&deg; to 41&deg; from a crystal Y axis around the crystal X axis of lithium tantalate is set as the surface of a substrate, a standardized electrode thickness (h/&lgr;) obtained by standardizing a thickness h of an electrode finger constituting at least a part of an interdigital transducer by a wavelength &lgr; of a surface acoustic wave is set to the range of 0.01 to 0.05, and a duty ratio (w/p) of the electrode finger decided based on a width w and an arraying cycle p of the electrode finger is set to the value ranging from 0.6 to just below 1.0.

Elastic wave device

In an elastic wave device, an electrode, which is formed in a comb-like shape and is made of conductive material having a prescribed thickness, is arranged on a substrate of a piezo-electric element containing lithium niobate as a main component. Also, in this elastic wave device, a surface of the substrate is set to a plane which is obtained by rotating a plane perpendicular to a crystal Y-axis of the lithium niobate by an angle ranging from 55 degrees to 57 degrees around a crystal x-axis of the lithium niobate, and a duty ratio (a width w of an electrode finger/an arrangement interval p of a pair of electrode fingers) of each of a plurality of electrode fingers composing the electrode is equal to or higher than 0.4 and is lower than 1.0.

A surface acoustic wave device which reflects a surface acoustic wave is provided. The reflector of the surface acoustic wave device includes electrode fingers. The electrode fingers are disposed at predetermined intervals d, and are divided into five groups by the width. The widths w of the electrode fingers are varied between widths w,w,and w,so that the reflectance becomes similar to the Hamming function.

Surface acoustic wave reflecting device having reflectance similar to the hamming function

Growing community of inventors

Chiba, Japan

Kenya Hashimoto