Canon Kabushiki Kaisha

Kentarou Suzuki

Yuichiro Yamashita

Mineo Shimotsusa

Yusuke Onuki

Junji Iwata

Taro Kato

Takehito Okabe

Masaya Ogino

Shunsuke Takimoto

Yukihiro Hayakawa

Tomoyuki Tezuka

Takashi Usui

Taskashi Usui

Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.

Solid-state image pickup apparatus

A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus

An imaging device includes a light-sensing pixel region; a first pixel region; a second pixel region; a first wiring layer disposed above the light-sensing pixel region; and a second wiring layer disposed above the topmost wiring layer of the wiring layer disposed above the light-sensing pixel region, above the second pixel region. The first pixel region is disposed between the light-sensing pixel region and the second pixel region, adjacent to the light-sensing pixel region and the second pixel region, wherein the first pixel region overlaps, in plan view, a first shielding portion included in the first wiring layer. The second pixel region overlaps, in plan view, a second shielding portion included in the second wiring layer. An electroconductive pattern is formed at the first wiring layer at a position overlapping the second pixel region in plan view.

Imaging device and imaging system

A method for manufacturing a solid-state image sensor having a pixel region, a peripheral circuit region, and an intermediate region interposed between the pixel region and the peripheral circuit region, includes forming a high melting point metal compound in active regions of the peripheral circuit region and the intermediate region, forming an etch stop film on the high melting point metal compound formed in the active regions of the peripheral circuit region and the intermediate region, forming an interlayer insulating film on the etch stop film, and forming, by using the etch stop film, a contact plug to contact the high melting point metal compound in the active region of the peripheral circuit region.

Solid-state image sensor, method for manufacturing the same, and camera

A solid-state image sensor comprising a photoelectric conversion portion, a MOS transistor, a first insulating layer, a second insulating layer whose refractive index is higher than that of the first insulating layer, and a light-guiding portion including a first portion and a second portion formed on the first portion, wherein an angle that the side face of the first portion makes with a plane parallel to a light-receiving face of the photoelectric conversion portion is smaller than an angle that a side face of the second portion makes with the parallel plane, and a boundary between the first portion and the second portion is positioned higher than an upper face of a gate electrode of the MOS transistor, and lower than a boundary between the first insulating layer and the second insulating layer.

Growing community of inventors

Kawasaki, Japan

Kentarou Suzuki