Taiyo Yuden Co., Ltd.

Kentarou Morito

Tomoyuki Takahashi

Yoshinari Take

Yuichi Sasajima

Proposed are thin film MIM capacitors with which deterioration of insulating properties and leakage current properties can be sufficiently inhibited. Also proposed is a manufacturing method for the thin film MIM capacitors. For the thin film MIM capacitor (), a lower electrode (), a base metal thin film (), the dielectric thin film () and the upper electrode () are formed to approximately the same area. The lower electrode () has a configuration that differs from the other films to form a part for external connection. The side surface of the base metal thin film (), the dielectric thin film (), and the upper electrode () are covered with a base metal oxide () that comprises the same metal atoms as the base metal thin film ().

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Takasaki, Japan

Kentarou Morito