Tokyo Electron Limited

Kentaro Yoshihara

Seiya Totsuka

Kousuke Yoshihara

Yuichi Yoshida

Masato Hayashi

Takami Satoh

Kouichirou Tanaka

Shinichi Hatakeyama

Hideo Shite

Ryouichirou Naitou

Naoki Shibata

Hiroyuki Ide

Masanobu Watanabe

Shogo Takahashi

Yusuke Miyakubo

Atsumu Maita

Hirofumi Araki

Takuya Miura

Kouzo Nishi

Yosuke Kameda

A nozzle unit for a liquid treatment apparatus that performs a liquid treatment on a substrate using a liquid, includes a first gas nozzle having a discharge flow path for allowing a first gas to flow through the discharge flow path and a first discharge port for discharging the first gas flowing through the discharge flow path toward a surface of the substrate, wherein the first discharge port is formed so as to extend in a first direction along the surface, and wherein a width of the discharge flow path in the first direction increases as the discharge flow path approaches the first discharge port, so that the first gas is discharged radially from the first discharge port.

Nozzle unit, liquid treatment apparatus, and liquid treatment method

A solution supply apparatus is for supplying a treatment solution to a treatment solution discharger which discharges the treatment solution to a treatment object. The solution supply apparatus includes: a supply pipe line connected to the treatment solution discharger; a filter provided on the supply pipe line which filters the treatment solution to remove foreign substances; and a controller. The controller performs a determination of a state of the treatment solution to be supplied to a primary side of the filter and, when the state of the treatment solution is determined to be bad, outputs a control signal for restricting supply of the treatment solution to the primary side of the filter.

Solution supply apparatus and solution supply method

A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.

Film forming method, storage medium, and film forming system

A substrate processing apparatus according to the present disclosure includes: a nozzle that ejects a processing liquid to a wafer; a force-feeding unit that force-feeds the processing liquid to the nozzle side; a liquid feeding pipeline that includes first and second valves and guides the processing liquid from the force-feeding unit to the nozzle; and a controller. The controller is configured to perform opening the first valve in a state where the second valve is closed and a pressure between the first and second valves is higher than a pressure between the force-feeding unit and the first valve, controlling the force-feeding unit to increase the pressure between the first and second valves that has been decreased by the opening of the first valve, and opening the second valve after the pressure between the first and second valves is decreased by the opening of the first valve.

Substrate processing method, substrate processing apparatus and storage medium

Growing community of inventors

Koshi, Japan

Kentaro Yoshihara