Nichia Corporation

Kentaro Watanabe

Giichi Marutsuki

Shunsuke Minato

Yuya Yamakami

A light-emitting element includes: a substrate; a semiconductor layered body including: a first semiconductor layer, an active layer, and a second semiconductor layer, wherein a portion of the first semiconductor layer is exposed from the active layer and the second semiconductor layer; a first electrode disposed on the exposed portion of the first semiconductor layer and electrically connected to the first semiconductor layer; a second electrode disposed on the second semiconductor layer; a first insulating layer covering the first electrode and the second electrode and having a first opening above the first electrode and a second opening above the second electrode; a first pad electrode disposed on the first insulating layer and electrically connected to the first electrode through the first opening; and a second pad electrode disposed on the first insulating layer and electrically connected to the second electrode through the second opening.

Light-emitting element including first semiconductor layer having exposed portion with first region and second regions

A method of fabricating a plurality of light emitting elements includes forming a nitride semiconductor layer on a growth substrate, the nitride semiconductor layer including at least an n-type nitride semiconductor layer, an active layer made of a nitride semiconductor, and a p-type nitride semiconductor layer stacked in this order; forming a p-electrode layer, the p-electrode layer including portions that correspond to the light emitting elements; forming a p-passivation layer that includes portions between the portions of the p-electrode layer formed on the upper surface of the nitride semiconductor layer; forming a seed layer on the p-electrode layer and the p-passivation layer; forming an insulating layer having portions formed on an upper surface of the seed layer; forming a plating layer on the seed layer; and forming a plating substrate by removing the insulating layer to form spaces between portions of the plating layer.

Semiconductor light emitting element fabrication method

A nitride semiconductor device includes a silicon substrate, a nitride semiconductor layer formed on the silicon substrate, and metal electrodes formed in contact with the silicon substrate. The metal electrodes has first metal layers which are formed in a shape of discrete islands and in contact with the silicon substrate, and second metal layers which are in contact with the silicon substrate exposed among the islands of the first metal layers and are formed to cover the first metal layers. Further, the second metal layers are made of a metal capable of forming ohmic contact with silicon, and the first metal layers are made of an alloy containing a metal and silicon, in which the metal is different than that in the second metal layer.

Method of manufacturing nitride semiconductor device having metal electrode formed on silicon substrate

A method of forming a semiconductor light emitting element. The method can include forming a seed layer on a semiconductor layer assembly including at least one nitride semiconductor layer. An insulating mask can be formed on the seed layer. The insulating mask can include a plurality of element areas separated by cross spaces. Each element area of the plurality of element areas can be connected to at least one of the other element areas of the plurality of element areas. The seed layer can be plated such that a plating substrate is formed in each of the plurality of element areas.

Semiconductor light emitting elements comprising a plating substrate with a projecting tab, or comprising an exposed seed layer

In the nitride semiconductor device using the silicon substrate, the metal electrode formed on the silicon substrate has both ohmic contact property and adhesion, so that the nitride semiconductor device having excellent electric properties and reliability is obtained. The nitride semiconductor device includes a silicon substrate (), a nitride semiconductor layer () formed on the silicon substrate (), and metal electrodes () formed in contact with the silicon substrate (). The metal electrodes () has first metal layers () which are formed in a shape of discrete islands and in contact with the silicon substrate (), and second metal layers () which are in contact with the silicon substrate () exposed among the islands of the first metal layers () and are formed to cover the first metal layers (). Further, the second metal layers () are made of a metal capable of forming ohmic contact with silicon, and the first metal layers () are made of an alloy containing a metal and silicon, in which the metal is different than that in the second metal layer ().

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Anan, Japan

Kentaro Watanabe