Central Glass Company, Limited

Other

Matsushita Electric Industrial Co., Ltd.

Shin-etsu Chemical Co., Ltd.

Kentaro Tsutsumi

Kazuhiko Maeda

Michitaka Ootani

Satoru Miyazawa

Jun Hatakeyama

Yoshio Kawai

Yuji Harada

Masaru Sasago

Masayuki Endo

Shinji Kishimura

Yoshi Hirashima

Jun Watanabe

Haruhiko Komoriya

Yukio Ikeda

Satoru Kobayashi

Yutaka Maruyama

Mikio Ootani

Michio Ishida

Yoshihiro Moroi

Seiji Hasegawa

Sunao Koga

Masayuki Shiota

Shuyo Akama

Kiyomi Sugawara

Toshio Koishi

Hiromi Sugimoto

Seichi Katsuragawa

Mikio Otani

Michitaka Ohtani

The present invention relates to a fluorine-containing copolymer. This fluorine-containing copolymer includes (a) a first unit derived from &#x3b1;-trifluoromethyl acrylic ester represented by the following general formula (1); and (b) a second unit derived from a vinyl monomer, 

Transparent fluorine-containing copolymer

The present invention relates to a fluorine-containing copolymer. This fluorine-containing copolymer includes (a) a first unit derived from &#x3b1;-trifluoromethyl acrylic ester represented by the following general formula (1); and (b) a second unit derived from a vinyl monomer,

A ternary copolymer comprising units of &#x3b1;-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of &#x3b1;-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Polymers, resist compositions and patterning process

A copolymer of an acrylate monomer containing fluorine at &#x3b1;-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.

A copolymer of an acrylic monomer having at least one Calicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.

A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a Flaser and is ideal as a micropatterning material in VLSI fabrication.

A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.

Resist compositions and patterning process

A positive resist composition contains (a) an acrylic resin which is subject to a change in solubility in a basic aqueous solution, the acrylic resin comprising an acrylic or methacrylic acid ester unit comprising an ester moiety comprising a fluorine-containing group; and (b) a photoacid generator capable of releasing an acid when irradiated with a laser. The composition is high in transparency to vacuum ultraviolet laser beams, particularly the F excimer laser beam, and high in sensitivity.

Positive resist composition and process for forming resist pattern using same

A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Acrylic esters containing fluorine at &agr;-position and having a lactone ring introduced into the ester side chain thereof are novel. Polymers obtained from the acrylic esters have a high transparency to VUV and good adhesion to substrates and are used to formulate chemically amplified resist compositions for lithographic microfabrication.

Ester compounds

An acrylate resin containing fluorinated alkyl groups in ester side chains has high transmittance to VUV radiation. A resist composition using the resin as a base polymer is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for lithographic microprocessing.

An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.

Octafluorotricyclodecane derivatives and processes for producing same

The invention relates to a fluorine-containing copolymer. This copolymer contains 1-99 mol % of a special first repeating unit of a cyclic perfluoro group; and 99-1 mol % of a second repeating unit of a bivalent organic group. The copolymer has a number average molecular weight of from 1,000 to 1,000,000 determined in a gel permeation chromatography using polystyrene as a standard material thereof. The invention further relates to a composition for forming a low reflectance film. This composition contains as a film-forming component a fluorine-containing polymer containing the first repeating unit. This polymer can be the above copolymer. A film formed by applying the composition to a substrate provides low reflectance and is improved in hardness.

Growing community of inventors

Saitama-ken, Japan

Kentaro Tsutsumi