Toshiba Materials Co., Ltd.

Kabushiki Kaisha Toshiba

Kyocera Corporation

Kentaro Takanami

Yoshiyuki Fukuda

Hiroshi Komorita

Yuusaku Ishimine

Takeshi Muneishi

Noritaka Nakayama

Kazuhiko Fujio

Takao Shirai

A flow path member may include silicon nitride ceramics. The flow path member may have an inlet port, an outlet port, and a flow path connected to the inlet port and the outlet port inside the flow path member. A plurality of needle-shaped crystals may be arranged on a surface of the flow path where the needle-shaped crystals intersect each other.

Flow path member and semiconductor module

There is provided a polycrystalline aluminum nitride substrate that is effective in growing a GaN crystal. The polycrystalline aluminum nitride base material for use as a substrate material for grain growth of GAN-base semiconductors, contains 1 to 10% by weight of a sintering aid component and has a thermal conductivity of not less than 150 W/m&#xb7;K, the substrate having a surface free from recesses having a maximum diameter of more than 200 &#x3bc;m.

Polycrystalline aluminum nitride base material for crystal growth of GaN-base semiconductor and method for manufacturing GaN-base semiconductor using the same

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Yokohama, Japan

Kentaro Takanami