Renesas Electronics Corporation

Kentaro Tada

Masahide Kobayashi

Tetsuro Okuda

Kazuo Fukagai

Kenji Endo

In an n-type semiconductor layer that contains gallium (Ga), contact resistance is to be suppressed at a low level. An n-side electrode is provided on a surface of the n-type semiconductor layer containing Ga. The electrode includes a metal layer having a Ga content of equal to or more than 1 at % and equal to or less than 25 at %. The metal layer is disposed in contact with the n-type semiconductor layer.

Electrode for semiconductor chip and semiconductor chip with the electrode

Provided is a semiconductor laser, wherein (&#x3bb;a&#x2212;&#x3bb;w)&#x3e;15 (nm) and Lt&#x3c;25 (&#x3bc;m), where &#x3bb;w is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 &#x3bc;m from one end surface in a resonator direction, &#x3bb;a is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and &#x2266;( 7/10)L from the one end surface in a resonator direction, 'L' is the resonator length, and 'Lt' is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of &#x3bb;w+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of &#x3bb;a&#x2212;2 (nm) in the resonator direction.

Method of manufacturing a semiconductor laser

Provided is a semiconductor laser, wherein (&#x3bb;a&#x2212;&#x3bb;w)&#x3e;15 (nm) and Lt&#x3c;25 (&#x3bc;m), where &#x3bb;w is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 &#x3bc;m from one end surface in a resonator direction, &#x3bb;a is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and &#x3c;( 7/10)L from the one end surface in a resonator direction, 'L' is the resonator length, and 'Lt' is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of &#x3bb;w+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of &#x3bb;a&#x2212;2 (nm) in the resonator direction.

Growing community of inventors

Kanagawa, Japan

Kentaro Tada