Tokyo Electron Limited

Kentaro Shiraga

Yutaka Fujino

Junya Miyahara

Koji Akiyama

Genji Nakamura

In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on a main surface of a semiconductor substrate. A first electrode layer is formed on the gate insulating film and a second electrode layer containing a work function adjusting metal is formed on the first electrode layer. Thereafter, an oxidation treatment or nitridation treatment using a microwave plasma processing apparatus is performed to inactivate the work function adjusting metal, thereby executing a threshold control of the MOS transistor.

Method of controlling threshold of transistor and method of manufacturing semiconductor device

A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20&#xb0; C. to 145&#xb0; C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/mto 3.5 kW/mwith respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

Growing community of inventors

Yamanashi, Japan

Kentaro Shiraga