Matsushita Electric Industrial Co., Ltd.

Kentaro Setsune

Hideaki Adachi

Akira Enokihara

Hidetaka Higashino

Koichi Mizuno

Kiyotaka Wasa

Yo Ichikawa

Masahiro Sakai

Akihiro Odagawa

Osamu Yamazaki

Syunichiro Kawashima

Makoto Kitabatake

Mitsuo Makimoto

Morikazu Sagawa

Takashi Hirao

Takeshi Kamada

Akihisa Yoshida

Shigemi Kohiki

Shinichiro Hatta

Teruhiro Shiono

Yasunao Okazaki

Masahiro Deguchi

Takeshi Uenoyama

Takao Tohda

Shigenori Hayashi

Kenzo Ohji

Michio Okajima

Toshihide Tanaka

Kunihiro Fujii

Takao Kawaguchi

Toshifumi Sato

Toshifumi Satoh

Kazuo Tazuke

Kouzou Murakami

Yo Ichikakwa

You Ichikawa

Mitihiko Takase

Tomoaki Matsushima

A surface acoustic wave device includes a piezoelectric substrate, a first interdigital transducer and a second interdigital transducer formed on the substrate so that the first and second interdigital transducers are opposed to each other. The substrate includes a doping region that is doped with a substance in at least one form selected from the group consisting of atoms, molecules and clusters in a surface between the first and second interdigital transducers.

Surface acoustic wave device and method for producing the same

A high-frequency circuit element including a substrate, a high-frequency circuit formed on the substrate, a metal box electromagnetically shielding the high-frequency circuit by enclosing the substrate and an input/output terminal placed on the metal box and inputting/outputting a high-frequency signal to/from the high-frequency circuit. Adding at least one plate for interrupting unwanted higher-order mode cutting off the propagation path of the high frequency waves in the space inside the metal box by substantially dividing the space inside the metal box makes it possible to cut off the propagation path where the high frequency waves propagates in the space inside the box and to suppress excitation and propagation of the unwanted higher-order mode that adversely affects the frequency characteristic of the high frequency circuit element.

High-frequency circuit element having means for interrupting higher order modes

A high-frequency circuit element that realizes a high degree of input-output coupling without causing an increase in loss and irregularity in impedance. A resonator made of a conductor film is formed on a substrate made of a dielectric monocrystal or the like. An input-output line made of a conductor film having a uniform line width is formed on the same surface of the substrate as the surface on which the resonator is formed. A part of the side edge of the input-output line is located along a coupling part on the peripheral part of the resonator and spaced from the resonator by a gap part.

Superconductive high-frequency circuit element with smooth contour

In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator ( ) that is formed of an electric conductor is formed on a substrate ( ), while a pair of input-output terminals ( ) are formed on a substrate ( ). Substrate ( ) on which resonator ( ) is formed and substrate ( ) on which input-output terminal ( ) is formed are located parallel to each other, with a surface on which resonator ( ) is formed and a surface on which input-output terminal ( ) is formed being opposed. Substrates ( ) and ( ) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate ( ) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator ( ) as a rotation axis ( ).

High-frequency circuit element having a superconductive resonator tuned by another movable resonator

High-frequency circuit element having a superconductive resonator with an electroconductive film about the periphery

In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) Al Ga N (0&lE;x&lE;1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of Al Ga N has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of Al Ga N is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.

Electron-emitting device

A plurality of circular or elliptical first, second, and third strip conductors are formed on the surface of a substrate made of a dielectric single crystal. The first, second, and third strip conductors are coupled to one another via gap portions. A ground plane is formed on the entire rear surface of the substrate. A first coupling terminal and a second coupling terminal are inductively coupled to the first planar circuit resonator in directions where first and second coupling terminal excite the two resonant modes of the first planar circuit resonator, which are orthogonally polarized.

High-frequency circuit element

Elliptical resonator with an input/output capacitive gap

A high power filter apparatus which is used in a mobile communication base station or the like is provided wherein the temperature stability and frequency selection are excellent, an insertion loss is small, the size is small, power consumption is low and costs are low. A shield case block comprises signal input and output portions, and a plurality of closed spaces which house a filter element connected between the signal input and output portions. A cooling plate is provide in a heat insulating container which houses the shield case block. The shield case block is fixed to the cooling plate in the thermal contact state. Each filter element is place almost in parallel. A cylindrical hole having an axis which is almost parallel with the face of the filter element penetrates the shield case block. A ground rod made of a conductor which changes the volume of the closed space is provided on the inner end portion of a movable member which moves in the axial direction of the cylindrical hole.

Wireless communication filter operating at low temperature

This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part between.

Superconducting device and a method of manufacturing the same

This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly-shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part in between.

High-frequency circuit element in which a resonator and input/ouputs are

A surface acoustic module is stable, and its operation frequencies can be varied with high precision. A method of manufacturing the surface acoustic module prevents the module's electrodes from being broken during separation of a sheet of modules into individual components. The surface acoustic module includes electrodes for transmitting and receiving a surface acoustic wave, a surface acoustic wave transmitting substrate, a high resistance thin film, and a thin film for differentiating the transmission velocity of a surface acoustic wave at the high resistance thin film from that at the substrate. The method includes the steps of forming a metallic film on a sheet of the surface acoustic wave transmitting substrate, of forming the electrodes on the metallic film, and of irradiating light or the like to the metallic film so as to increase the film's resistivity.

Method of manufacturing surface acoustic ware modules

This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi.sub.2 Sr.sub.2 (Ca.sub.0.6 Y.sub.0.4)Cu.sub.2 O.sub.8, Bi.sub.2 Sr.sub.2 Cu.sub.2 O.sub.6 and Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 as the barrier layer between the superconducting oxide electrodes. The structural matching of the superconducting oxide with the Bi-based compound is supposed to be good. Some kinds of Cu-based superconducting oxides such as YSr.sub.2 Cu.sub.2.7 Re.sub.0.3 O.sub.7, Sr.sub.2 CaCu.sub.2 O.sub.6 and (La.sub.0.9 Sr.sub.0.1).sub.2 CuO.sub.4 are used for the electrodes to obtain a Josephson element which can work at a high temperature. When using the superconducting oxides including Ba such as YBa.sub.2 Cu.sub.3 O.sub.7 for the electrode, forming a thin film between the electrode and the barrier is better to prevent Ba from reacting with Bi in the barrier layer. The superconducting device comprising the element has various uses such as magnetic detecting use, communicating use and computing use.

Superconducting tunnel junction element and superconducting device

A superconducting junction device which is easily manufactured, multifunctional, and utilizes the superconducting Josephson effects is described. A first junction (Josephson junction) and a second junction (Josephson junction) are disposed o a substrate across a coupling portion of a dielectric. The first junction comprises a first upper electrode, a first barrier layer and a first lower electrode. The second junction comprises a second upper electrode, a second barrier layer and a second lower electrode. The first lower electrode and the second lower electrode are connected in series via a connecting electrode. A superconducting reflecting wall which is connected via the connecting electrode is provided around the two Josephson junctions including the coupling portion.

Superconducting junction device

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Osaka, Japan

Kentaro Setsune