Spansion Llc.

Fujitsu Amd Semiconductor Limited

Kentaro Sera

Tatsuya Kajita

Masahiko Higashi

Yukihiro Utsuno

Hiroyuki Nansei

Hideo Takagi

Manabu Nakamura

Fumihiko Inoue

The present invention is a manufacturing method for a semiconductor device having steps of; aligning a program headhaving a program dot array corresponding to each OTP-ROM cell arrayprovided in areasto be a plurality of semiconductor chips arranged in a semiconductor wafer to the OTP-ROM cell arrayin one of the areas to be the plurality of semiconductor chips; and programming the OTP-ROM cell arraywith a different pattern for each of the areas to be the plurality of semiconductor chipsby using the program head

Semiconductor device and method of manufacturing the same and semiconductor manufacturing device

After an ONO film in which a silicon nitride film () formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (), (), a bit line diffusion layer () is formed in a memory cell array region () by an ion implantation as a resist pattern () taken as a mask, then lattice defects are given to the silicon nitride film () by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

Semiconductor memory device and manufacturing method thereof

After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.

Semiconductor memory device and method for manufacturing semiconductor device

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Aizuwakamatsu, Japan

Kentaro Sera