Renesas Electronics Corporation

Canon Kabushiki Kaisha

Tdk Corporation

Renesas Technology Corp.

Ntt Docomo, Inc.

Nippon Paint Compnay, Ltd.

Kentaro Saito

Hiraku Chakihara

Yoshiyuki Kawashima

Koichi Toba

Yasushi Ishii

Takashi Hashimoto

Toshikazu Matsui

Satoru Machida

Hitoshi Ohkubo

Kyohei Tonoyama

Miyuki Asai

Ken Satoh

Yoichi Takaragi

Akio Ito

Kozo Katayama

Kosuke Okuyama

Munekatsu Nakagawa

Masao Hayashi

Hideki Sugiyama

Hiroyuki Kimura

Kazumasa Yanagisawa

Yoshiaki Sato

Akira Matsumoto

Tatsuya Yamamoto

Hiroshi Kaburagi

Toshio Inbe

Masahiko Matsukawa

Ken Igarashi

Yoshinori Deguchi

Kazuhiro Sakaguchi

Tadashi Hagiuda

Daisuke Ochi

Kohei Iwabuchi

Satoru Mamiya

Yuuichi Nitto

Masaji Munekuni

Toshikazu Sekizawa

Mitsunobu Wansawa

Kasuyoshi Yamasoe

There is provided with an information processing system including a server apparatus, and a first apparatus and a second apparatus that are able to communicate with the server apparatus. A management unit collects, based on a predetermined reference, each piece of data that is acquired from the first apparatus and is associated with each of a plurality of images and manage the collected data. An image identification unit identifies at least a portion of the plurality of images based on the collected data. A sending unit sends the at least a portion of the plurality of images that is identified by the image identification unit, to the second apparatus.

Information processing system, a server apparatus, and information processing method

A magnetic core includes a metal magnetic powder, which has a large size powder, an intermediate size powder, and a small size powder. A particle size of the large size powder is 10 &#x3bc;m or more and 60 &#x3bc;m or less. A particle size of the intermediate size powder is 2.0 &#x3bc;m or more and less than 10 &#x3bc;m. A particle size of the small size powder is 0.1 &#x3bc;m or more and less than 2.0 &#x3bc;m. The large size powder, the intermediate size powder, and the small size powder have an insulation coating. When A1 represents an average insulation coating thickness of the large size powder, A2 represents an average insulation coating thickness of the intermediate size powder, A3 represents an average insulation coating thickness of the small size powder, A3 is 30 nm or more and 100 nm or less, A3/A1&#x2265;1.3, and A3/A2&#x2265;1.0.

Magnetic core and coil component

A magnetic core and a coil component with excellent permeability, core loss, DC superimposition property, and withstand voltage. A magnetic core has a metal magnetic powder containing resin including a metal magnetic powder. The metal magnetic powder includes a large size powder, an intermediate size powder, and a small size powder. A particle size of the large size powder is 10 &#x3bc;m or more and 60 &#x3bc;m or less. A particle size of the intermediate size powder is 2.0 &#x3bc;m or more and less than 10 &#x3bc;m. A particle size of the small size powder is 0.1 &#x3bc;m or more and less than 2.0 &#x3bc;m. The large size powder includes a nano crystal. A ratio of the large size powder existing with respect to the metal magnetic powder is 39% or more and 91% or less in terms of an area ratio in a cross section of the magnetic core.

An apparatus that assists an survey of a crop cultivated in each of blocks obtained by dividing a field, comprising: an input unit configured to accept, for an survey executed for the crop, the input of identification information identifying at least one of the surveys, block information indicating the block where the survey has been executed, item information indicating an survey item, and measured values measured at survey positions; and a processing unit configured to cause a transition in the aggregating result to be displayed as a result of the survey, wherein the input unit further accepts the input of a user operation specifying part of the transition of a result of aggregating the input measured values; and of the measured values, the processing unit causes reliability information of the aggregating result of the part to be displayed.

Information processing apparatus, control method for information processing apparatus, and storage medium

In a method of manufacturing a semiconductor device according to one embodiment, after a semiconductor wafer including a non-volatile memory, a bonding pad and an insulating film comprised of an organic material is provided, a probe needle is contacted to a surface of the bonding pad located in a second region, and a data is written to the non-volatile memory. Here, the insulating film is formed by performing a first heat treatment to the organic material. Also, after a second heat treatment is performed to the semiconductor wafer, and the non-volatile memory to which the data is written is checked, a barrier layer and a first solder material are formed on the surface of the bonding pad located in a first region by using an electroplating method. Further, a bump electrode is formed in the first region by performing a third heat treatment to the first solder material.

Method of manufacturing semiconductor device

In a semiconductor device, a memory cell is formed of a control gate electrode and a memory gate electrode adjacent to each other, a gate insulating film formed below the control gate electrode and an insulating film formed below the memory gate electrode and having a charge accumulating part therein. Also, in this semiconductor device, a capacitive element is formed of a lower electrode, an upper electrode and a capacitive insulating film formed between the upper electrode and the lower electrode. A thickness of the lower electrode is smaller than a thickness of the control gate electrode.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a corner constituted by a first side and a second side being perpendicular to the first side; and a plurality of pads including a first pad, arranged along the second side and formed over a semiconductor substrate. The first pad is arranged nearer the corner than other pads of the plurality of pads. The first pad includes a third side, a fourth side being perpendicular to the third side, a fifth side being parallel to the third side and a sixth side being perpendicular to a fifth side. The third side and the fourth side are nearer to the corner than the fifth side and sixth side. A first dummy wiring is formed along the first side. A second dummy wiring is formed along the second side. The first dummy wiring and the second dummy wiring are formed integrally with each other.

To improve a semiconductor device having a nonvolatile memory. A first MISFET, a second MISFET, and a memory cell are formed, and a stopper film made of a silicon oxide film is formed thereover. Then, over the stopper film, a stress application film made of a silicon nitride film is formed, and the stress application film over the second MISFET and the memory cell is removed. Thereafter, heat treatment is performed to apply a stress to the first MISFET. Thus, a SMT is not applied to each of elements, but is applied selectively. This can reduce the degree of degradation of the second MISFET due to H (hydrogen) in the silicon nitride film forming the stress application film. This can also reduce the degree of degradation of the characteristics of the memory cell due to the H (hydrogen) in the silicon nitride film forming the stress application film.

The performances of a semiconductor device are improved. The semiconductor device has a first control gate electrode and a second control gate electrode spaced along the gate length direction, a first cap insulation film formed over the first control gate electrode, and a second cap insulation film formed over the second control gate electrode. Further, the semiconductor device has a first memory gate electrode arranged on the side of the first control gate electrode opposite to the second control gate electrode, and a second memory gate electrode arranged on the side of the second control gate electrode opposite to the first control gate electrode. The end at the top surface of the first cap insulation film on the second control gate electrode side is situated closer to the first memory gate electrode side than the side surface of the first control gate electrode on the second control gate electrode side.

Semiconductor device and a manufacturing method thereof

The present invention improves the performance of a semiconductor device. In a manufacturing method of a semiconductor device, sacrificial oxide films are formed over the side surface of a control gate electrode formed in a memory cell region, the surface of a cap insulating film formed in the memory cell region, and the surface of the part, which remains in a peripheral circuit region, of an insulating film. The step of forming the sacrificial oxide films includes the steps of: oxidizing the side surface of the control gate electrode by a thermal oxidation method; and oxidizing the surface of the cap insulating film and the surface of the part, which remains in the peripheral circuit region, of the insulating film by an ISSG oxidation method.

Manufacturing method of semiconductor device

To improve a semiconductor device having a nonvolatile memory. a first MISFET, a second MISFET, and a memory cell are formed, and a stopper film made of a silicon oxide film is formed thereover. Then, over the stopper film, a stress application film made of a silicon nitride film is formed, and the stress application film over the second MISFET and the memory cell is removed. Thereafter, heat treatment is performed to apply a stress to the first MISFET. Thus, a SMT is not applied to each of elements, but is applied selectively. This can reduce the degree of degradation of the second MISFET due to H (hydrogen) in the silicon nitride film forming the stress application film. This can also reduce the degree of degradation of the characteristics of the memory cell due to the H (hydrogen) in the silicon nitride film forming the stress application film.

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Tokyo, Japan

Kentaro Saito