Mitsubishi Denki Kabushiki Kaisha

Semiconductor Research Foundation

Kentaro Nakamura

Takashi Kitsuregawa

Jun-ichi Nishizawa

A process of manufacturing a static induction thyristor comprising providing a semiconductor substrate of the first conductivity type which defines a first semiconductor layer and forming a second semiconductor layer thereon of a second conductivity type. The first and second semiconductor layers have relative impurity concentrations effective for forming therebetween charge depletion regions when no electrical signal is applied to the second semiconductor layer and which prevent injection of charge carriers through the second semiconductor layer when the thyristor is in a blocking state, and such that electrically forward biasing the second semiconductor layer effectuates a sufficient reduction of the depletion regions that a sufficient quantity of charge carriers may be injected through the second semiconductor layer that the thryistor switches to a conductive state. The second semiconductor layer defines the gate region of the thyristor.

Epitaxial deposition process for producing an electrostatic induction

The disclosed thyristor comprises an n.sup.- semi-conductor layer, a p.sup.- semiconductor layer disposed on one surface of the n.sup.- layer to form a pn junction between them, an n.sup.+ and a p.sup.+ semiconductor layer disposed on the other surfaces of the n.sup.- and p.sup.- layers respectively to serve as main electrodes and a p.sup.+ and a n.sup.+ apertured gate layers disposed within the n.sup.- and p.sup.- layers respectively and provided with a gate electrode. An intrinsic semiconductor layer may be substituted for the n.sup.- and p.sup.- layers. A process of producing such a thyristor is also disclosed.

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Sendai, Japan

Kentaro Nakamura