Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Sony Corporation

Sony Group Corporation

Sony Mobile Communications Inc.

Kentaro Matsunaga

Eishi Shiobara

Shinichi Ito

Eiji Yoneda

Daisuke Kawamura

Tsuneji Kameda

Masato Yoshino

Tomoya Oori

Hirokazu Kato

Tatsuhito Aono

Yasuo Takagi

Shoji Mimotogi

Yasunobu Onishi

Takayuki Fukasawa

Kazuya Yamada

Shoko Suyama

Yumi Nakajima

Seiro Miyoshi

Yoshihisa Kawamura

Yoshiyasu Ito

Shigeo Kasai

Daisuke Horikawa

Katsuya Okumura

Soichi Inoue

Tetsuro Nakasugi

Ikuo Yoneda

Kei Hayasaki

Nobuhiro Komine

Keisuke Kikutani

Satoshi Nagai

Tomoyuki Takeishi

Yoshiyasu Itoh

Takuya Kono

Yoshihiro Yanai

Akiko Mimotogi

Norikazu Osada

Kazuhiro Segawa

Kazuyuki Yahiro

Keizo Shimamura

Yukiko Kikuchi

Yoshio Hanakata

Maki Miyazaki

Koutarou Sho

Issui Aiba

Sonoe Nakaoka

Yukiko Sato

Masashi Terao

A band device according to an aspect of the present disclosure includes a sensor unit, and a band unit that is linked to the sensor unit and forms a hollow part together with the sensor unit. The band unit includes an end piece section to which a watch head section is attached, and an engaging section that makes detachable engagement in a state where the band unit is wrapped around a wrist.

Band device, wristwatch, and end piece

There is provided a band device that includes an annular band portion that forms a hollow portion, and the annular band portion includes a sensor module, a buckle portion, and an engaging portion detachably engaged with a plurality of end pieces to which a watch head is attached. The buckle portion includes a central blade, a first movable blad, and a second movable blade.

A storage device according to embodiments includes a substrate, a stacked body, a first region, a second region, and first to nth electrodes. The stacked body is provided on the substrate and having first to nth (n is an integer of 3 or more) conductive layers stacked in a direction perpendicular to a surface of the substrate. The first region includes a part of the stacked body, and has a first step structure including the first to the nth conductive layers. The second region includes a part of the stacked body, and has a second step structure different from the first step structure including at least a part of the first to nth conductive layers. The first to nth electrodes are provided in the first region and connected to the first to nth conductive layers and extend in a direction perpendicular to the surface of the substrate.

Storage device and manufacturing method for the same

There is provided an electronic device including: a first segment and a second segment linked to each other in a rotationally movable manner; a flexible circuit board installed throughout the first segment and the second segment in interiors of the first segment and the second segment; a loosening portion formed by the flexible circuit board being pushed out while being bent in the second segment; and a support unit configured to maintain a direction of pushing-out of the loosening portion to a fixed direction.

Wristwatch with flexible circuit board installed through band portion

According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and openings different in depth surrounded by the stacked body and separated from each other.

Manufacturing method for a semiconductor device including resist films different in thickness

According to one embodiment, there is provided an exposure method. The method includes attaching a thin film sheet thermally shrinkable onto a rear face of a wafer. The method includes heating the wafer provided with the thin film sheet attached thereon, and deforming the wafer into a shape projecting on a front face side of the wafer. The method includes fixing the deformed wafer onto a stage by vacuum suction holding from a rear face side of the wafer. The method includes performing exposure to the fixed wafer.

Exposure method, manufacturing method of device, and thin film sheet

According to one embodiment, first a guide pattern is formed above an object to processing, and then surface modification is performed on the guide pattern. Then a solution including a block copolymer is coated over the object to processing having the guide pattern formed thereon, and the block copolymer is made to phase separate over the object to processing. Subsequently, one component of the phase-separated block copolymer is removed by development. And with the guide pattern coated with other component of the block copolymer as a mask, the object to processing is patterned.

Pattern forming method

In one embodiment, an electrical power storage system using hydrogen includes a power generation unit generating power using hydrogen and oxidant gas and an electrolysis unit electrolyzing steam. The electrical power storage system includes a hydrogen storage unit storing hydrogen generated by the electrolysis and supplying the hydrogen to the power generation unit during power generation, a high-temperature heat storage unit storing high temperature heat generated accompanying the power generation and supplying the heat to the electrolysis unit during the electrolysis, and a low-temperature heat storage unit storing low-temperature heat, which is exchanged in the high-temperature heat storage unit and generating with this heat the steam supplied to the electrolysis unit.

Electrical power storage system using hydrogen and method for storing electrical power using hydrogen

According to an embodiment, a guide pattern having a first opening pattern and a second opening pattern shallower than the first opening pattern, is formed on a film to be processed. A directed self-assembly material is set into the first and second opening patterns. The directed self-assembly material is phase-separated into first and second phases in the first and second opening patterns. A third opening pattern is formed by removing the first phase. The third opening pattern in the second opening pattern is eliminated, and the second and third opening patterns are transferred to the film to be processed, by one etching to be processed from the tops of the second and third opening patterns.

Pattern formation method

According to one embodiment, an EUV exposure apparatus includes a mirror which reflects an EUV light beam irradiated from a light source and a wafer stage which is irradiated with the EUV light beam reflected by the mirror. When exposure of a first wafer is to be performed, the first wafer is mounted on the wafer stage, and the wafer stage allows the first wafer to be irradiated with the EUV light beam. In addition, when cleaning of the mirror is to be performed, the EUV light beam is reflected by a reflection substrate, and the wafer stage allows the mirror to be irradiated with the reflected light beam.

EUV exposure apparatus and cleaning method

A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys.

Fuel electrodes for solid oxide electrochemical cell, processes for producing the same, and solid oxide electrochemical cells

According one embodiment, a pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, includes: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region, the curing of the first resist layer being suppressed.

Pattern formation method and pattern formation apparatus

A semiconductor manufacturing apparatus according to the present embodiment includes a vacuum chamber. A stage mounts a semiconductor substrate thereon within the vacuum chamber. An electrostatic chuck fixes the semiconductor substrate onto the stage. A sensor detects a height of a surface of the semiconductor substrate fixed onto the stage by the electrostatic chuck. A processor determines whether the surface of the semiconductor substrate is distorted based on the height of the surface of the semiconductor substrate. The processor calculates correction values for a pattern transferred onto the surface of the semiconductor substrate by exposure based on the height of the surface of the semiconductor substrate when the surface of the semiconductor substrate is distorted. An exposure part exposes the surface of the semiconductor substrate to light using the correction values.

Semiconductor manufacturing apparatus and device manufacturing method using substrate distortion correction

According to one embodiment, first, on a process object, a hydrophilic guide pattern including a first hole forming pattern having a first hole diameter and a second hole forming pattern having a second hole diameter is formed. Then, above the guide pattern, a frame pattern having a first opening region in a forming region of a plurality of the first hole forming patterns and a second opening region in a forming region of a plurality of the second hole forming patterns is formed. Then, a first solution including a first block copolymer having a hydrophilic polymer chain and a hydrophobic polymer chain is supplied to the first opening region to condense the first block copolymer. The hydrophilic polymer chain is then removed to reduce the diameter of the first hole forming pattern to a third hole diameter that is smaller than the first hole diameter.

Pattern forming method using block copolymers

According to one embodiment, first, a core pattern is formed above a hard mask layer that is formed above a process object. Then, a spacer film is formed above the hard mask layer. Next, the spacer film is etch-backed. Subsequently, an embedded layer is embedded between the core patterns whose peripheral areas are surrounded by the spacer film. Then, the core pattern and the embedded layer are removed simultaneously. Subsequently, using the spacer pattern as a mask, the hard mask layer and the process object are processed.

Pattern forming method and method of manufacturing semiconductor device

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Tokyo, Japan

Kentaro Matsunaga