Shin-etsu Chemical Co., Ltd.

Kentaro Kumaki

Tomohiro Kobayashi

Koji Hasegawa

Jun Hatakeyama

Satoshi Watanabe

Kazuhiro Katayama

Daisuke Domon

Akihiro Seki

Takeshi Kinsho

Masaki Ohashi

Masayoshi Sagehashi

Masahiro Fukushima

Kenji Funatsu

Kenji Yamada

Chuanwen Lin

A shrink material is provided comprising a specific polymer and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.

Shrink material and pattern forming process

A shrink material is provided comprising a polymer comprising recurring units of formula (1) and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern. 

A resist composition comprising a polymer comprising recurring units having an acid labile group of cyclopentyl with tert-butyl or tert-amyl pendant is coated onto a substrate, baked, exposed to high-energy radiation, PEB and developed in an organic solvent to form a negative pattern. A fine hole pattern can be formed from the resist composition with advantages including high dissolution contrast, good size control and wide depth of focus.

Patterning process and resist composition

A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R&#x2014;COOC(CF)&#x2014;CHSORRRSwherein Ris a monovalent hydrocarbon group, R, Rand Rare an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.

A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group of tertiary ester and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern at a high sensitivity and dimensional control.

A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

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Joetsu, Japan

Kentaro Kumaki