Fujitsu Corporation

Sharp Kabushiki Kaisha Corporation

Tottori University

Kentaro Kinoshita

Tetsuro Tamura

Takahiro Sasaki

Hideyuki Noshiro

Chikako Yoshida

Satoru Kishida

A diagnosis processing device is provided in which diagnosis is realizable by a simple arrangement. A diagnosis processing device () of the present invention includes: a learning pattern creating section () for creating a learning pattern by sampling data from a learning image in which abnormality information indicating a substantive feature of abnormality of a target is pre-known; a learning processing section () for causing a neural network () to learn, by using learning patterns; a diagnostic pattern creating section () for creating a diagnostic pattern by sampling data from a diagnostic image in which abnormality information is unknown; a determination processing section () for determining a substantive feature of the abnormality of the target indicated in the abnormality information in the diagnostic image, based on an output value outputted, in response to an input of the diagnostic pattern, from a learned neural network () which is a neural network subjected to learning.

Diagnosis processing device, diagnosis processing system, diagnosis processing method, diagnosis processing program and computer-readable recording medium, and classification processing device

In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a transistor T, interlayer insulating films, W plugs and the like are formed on a semiconductor substrate. Thereafter, a Pt film serving as a lower electrode of the resist change element is formed and a transition metal film (Ni film) is formed on the Pt film. After that, the surface of the transition metal film is oxidized to form a transition metal oxide film and a Pt film serving as an upper electrode is formed on the transition metal oxide film.

Method of manufacturing resistance change element

A nonvolatile semiconductor memory device includes a memory cell including a resistance memory element which memorizes a high resistance state or a low resistance state, switches the high resistance state and the low resistance state by voltage application, one end of the resistance memory element being coupled to a bit line, the other end of the resistance memory element being coupled to a source line via the first transistor; and a resistor whose resistance value is higher than a resistance value of the resistance memory element in the low resistance state and lower than a resistance value of the resistance memory element in the high resistance state, one end of the resistor being coupled to said one end of the resistance memory element and the bit line, the other end of the resistor being coupled to the source line via the second transistor.

Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device

A titanium oxide film, a nickel oxide film and a top electrode are formed on a bottom electrode, and a resistance element is constituted by the bottom electrode, the titanium oxide film, the nickel oxide film and the top electrode. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. A rate of oxygen in nickel oxide composing the nickel oxide film is lower than a rate of oxygen in a stoichiometric composition.

Semiconductor device and manufacturing method of the same

A resistance memory element memorizing a high resistance state or a low resistance state in a memory region and switched between the high resistance state and the low resistance state by an application of a voltage includes a resistance memory layerof a resistance memory material, an electrodeand an electrodearranged, sandwiching the resistance memory layer. The electrodeand the electrodeare formed on the same surface, whereby the manufacturing process of the resistance memory element can be simplified.

Resistance memory element and method of manufacturing the same, and semiconductor memory device

A resistance memory element, which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage, includes a pair of electrodes and a resistance memory layer sandwiched between the pair of electrodes and including a first layer of a first resistance memory material and a second layer of a second resistance memory material. The current value of the resistance memory element in the writing operation can be drastically decreased, and a nonvolatile semiconductor memory device of high integration and low electric power consumption can be formed.

Resistance memory element and nonvolatile semiconductor memory

An NMOS transistorhaving one end connected to one end of a resistance memory elementis provided, and when a voltage is applied to the resistance memory elementvia the NMOS transistorto switch the resistance memory elementfrom the low resistance state to the high resistance state, the gate voltage of the NMOS transistoris set at a value which is equal to or greater than the total of the reset voltage of the resistance memory elementand the threshold voltage of the NMOS transistorand is smaller than the total of the set voltage of the resistance memory elementand the threshold voltage of the NMOS transistor, whereby the voltage applied to the resistance memory elementis set at a value which is equal to or greater than the reset voltage and is smaller than the set voltage.

Method of writing into semiconductor memory device

In a method of writing into a nonvolatile semiconductor memory device including a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage, a variable resistor is parallelly connected to the resistance memory element, and when the voltage is applied to the resistance memory element to switch the resistance memory element between the high resistance state and the low resistance state, a resistance value of the variable resistor is set corresponding to the resistance state of the resistance memory element so that a writing circuit for applying the voltage to the resistance memory element, and a synthetic resistor of the resistance memory element and the variable resistor make the impedance-matching.

Growing community of inventors

Tottori, Japan

Kentaro Kinoshita