Flosfia Inc.

Kyoto University

National Institute for Materials Science

Saga University

Eyetec Co., Ltd.

Kentaro Kaneko

Toshimi Hitora

Shizuo Fujita

Takashi Shinohe

Masaya Oda

Tokiyoshi Matsuda

Takayuki Uchida

Tomochika Tanikawa

Yuichi Oshima

Shingo Yagyu

Katsuaki Kawara

Takashi Tanaka

Masafumi Ono

Riena Jinno

Makoto Kasu

Takashi Hirao

A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

P-type oxide semiconductor and method for manufacturing same

An electrically-conductive member having sufficient corrosion resistivity even when the electrically-conductive member is exposed to high potential environment and a method of manufacturing the electrically-conductive member are offered. An electrically-conductive member is obtained by a mist CVD method, by forming a metal oxide film on a base member of a separator, and the electrically-conductive member has an active potential range and a passive potential range in an anode polarization curve that is measured in a sulfuric acid aqueous solution having a sulfuric acid concentration that is 5.0&#xd7;10mol/dmat pH3 and having a temperature of 25&#xb0; C., an anode current density that is 1&#xd7;10A/cmor less in the passive potential range, and the passive potential range reaching to an electric potential that is 1V.

Electrically-conductive member and method of manufacturing the same

A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 &#x3bc;m or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 &#x3bc;m or less in film thickness with carrier density that is 1&#xd7;10/cmor less and electron mobility that is 1 cm/Vs or more.

Semiconductor film, method of forming semiconductor film, complex compound for doping, and method of doping

A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution including iridium and a metal that is different from iridium and optionally contained; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base to form a crystal or a mixed crystal of a metal oxide including iridium.

In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.

Semiconductor device and method of manufacturing semiconductor device

According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 &#x3bc;mor more, and a dislocation density that is less than 5&#xd7;10cm.

Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.

Growing community of inventors

Kyoto, Japan

Kentaro Kaneko