Novaled Ag

Tdk Corporation

Jsr Corporation

Novaled Gmbh

Kentaro Harada

Tsuyoshi Umehara

Karl Leo

Ansgar Werner

Martin Pfeiffer

Kenichi Takano

Goji Wakamatsu

Gregor Schwartz

Karsten Walzer

Takehiko Naruoka

Jan Birnstock

Hiroki Nakagawa

Hayato Namai

Horst Hartmann

Andrea Lux

Takafumi Kobayashi

Jan Blochwitz-Nimoth

Bjoern Luessem

Michael Hofmann

Michael Limmert

Tobias Canzler

Ulrich Denker

Qiang Huang

Frank Lindner

Olaf Kühl

Simon Gessler

Andre Grüssing

Andre c/o Novaled Gmbh Grüssing

A magnetic sensor is provided that can attenuate a magnetic field in a direction that is perpendicular to the magnetic field detecting direction at a higher rate than the magnetic field in the magnetic field detecting direction. Magnetic sensorhas: first soft magnetic layer; a pair of second soft magnetic layersA,B that is positioned at a location that is different from first soft magnetic layerin the Z direction of first soft magnetic layer; and magnetic field detecting elementthat is positioned between first soft magnetic layerand second soft magnetic layersA,B in the Z direction, wherein magnetic field detecting elementhas a magnetic field detecting direction that is parallel to a direction in which the pair of second soft magnetic layersA,B is arranged. As viewed in the Z direction, second soft magnetic layersA,B are positioned on both sides of a center of first soft magnetic layer, and magnetic field detecting elementis positioned inside of a periphery of first soft magnetic layer

Magnetic sensor

A method of designing a magnetic sensor that can easily accommodate various design conditions is provided. The method has:

Method of designing and manufacturing magnetic sensor

Magnetic sensor assemblyhas first memberhaving first to third magnetic sensorsA toC, and second memberhaving first to third magnetsA toC. Second membercan be moved in X and Y directions and can be rotated about a Z axis relative to first member. Output of first to third magnetic sensorsA toC monotonously changes. A change of the output of first magnetic sensor and a change of the output of second magnetic sensor are different from each other. First to third magnets are positioned on first to third straight lines Lto L. A first angle that is formed between first straight line Land X axis, a second angle that is formed between second straight line Land X axis, and a third angle that is formed between third straight line Land Y axis are same.

Magnetic sensor assembly and camera module having the same

A cleaning method of an immersion liquid includes supplying an immersion liquid on a surface of a cleaning substrate. The immersion liquid is to be used in a liquid immersion lithography apparatus. The cleaning substrate has a substrate and an organic film laminated on a top face side of the substrate. The immersion liquid is allowed to move on the substrate to remove contaminants from the immersion liquid.

Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate

This disclosure relates to an organic zener diode having one electrode and one counter electrode, and an organic layer arrangement formed between the electrode and the counter electrode, wherein the organic layer arrangement includes the following organic layers: an electrically n-doped charge carrier injection layer on the electrode side, made from a mixture of an organic matrix material and an n-dopant, an electrically p-doped charge carrier injection layer on the counter electrode side, made from a mixture of another organic matrix material and a p-dopant, and an electrically undoped organic intermediate layer that is arranged between the electrically n-doped charge carrier injection layer on the electrode side and the electrically p-doped charge carrier injection layer on the counter electrode side. An electronic circuit arrangement with an organic zener diode and method for operating an organic zener diode are also provided.

Organic zener diode, electronic circuit, and method for operating an organic zener diode

A pattern-forming method includes applying a photoresist composition to a substrate to form a resist film. The photoresist composition includes an acid generator and a first polymer that includes an acid-dissociable group. The resist film is exposed. The resist film is developed using a developer having an organic solvent content of 80 mass % or more to form a prepattern of the resist film. A polymer film having a phase separation structure in a space defined by the prepattern is formed using a composition that includes a plurality of second polymers. A part of the phase separation structure of the polymer film is removed.

Pattern-forming method

The invention relates to an electroluminescent light-emitting device comprising an arrangement of organic layers which are applied to a substrate, and also to a method for its production. The arrangement of organic layers comprises the following layers: at least one charge carrier transport layer consisting of organic material, and at least one light-emitting layer consisting of organic material. The arrangement of organic layers furthermore comprises at least one doped fullerene layer which has a doping that increases the electrical conductivity.

Electroluminescent light-emitting device comprising an arrangement of organic layers, and method for its production

A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a &#x3c0; complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.

Use of a metal complex as an n-Dopant for an organic semiconducting matrix material, organic of semiconducting material and electronic component, and also a dopant and ligand and process for producing same

The invention relates to an organic optoelectronic component comprising a base electrode, a top electrode that is provided with passages and an arrangement of organic layers, which is formed between the base electrode and the top electrode and makes electrical contact with said electrodes. In said component, light can be generated in a light-emitting region by the application of electrical energy to the base electrode and the top electrode. An organic current distribution layer also extends into the region containing the passages, said layer making electrical contact with the top electrode and the light-emitting region.

Organic optoelectronic component

The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

Organic field-effect transistor and circuit

The invention relates to an arrangement for an organic pin-type light-emitting diode with an electrode and a counter-electrode and a stack with organic layers between the electrode and the counter-electrode, where the stack with the organic layers comprises an emission layer comprising a k (k=1, 2, 3, . . . ) organic matrix materials, a doped charge carrier transport layer, which is arranged between the electrode and the emission layer, a further doped charge carrier transport layer, which is arranged between the counter-electrode and the emission layer, and one block layer, which is arranged between one of the doped charge carrier transport layers and the emission layer. The organic layers of the stack are formed by means of n (n&#x2266;k+2) organic matrix materials, where the n organic matrix materials comprise the k organic matrix materials of the emission layer. The stack with the organic layers can also be executed in a block-layer-free manner, where then the emission layer and the doped charge carrier transport layer are formed from an organic matrix material. Furthermore, a method for manufacturing such arrangements is stated.

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Dresden, Germany

Kentaro Harada