Rohm Co., Ltd.

Kyoto University

Kentaro Chikamatsu

Hirotaka Otake

Kenichi Yoshimochi

Koshun Saito

Minoru Akutsu

Shinya Takado

Atsushi Yamaguchi

Taketoshi Tanaka

Takashi Hikihara

Kohei Nagaoka

A nitride semiconductor deviceincludes a first nitride semiconductor layer that constitutes an electron transit layer, a second nitride semiconductor layer that is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer, a gate portion that is formed on the second nitride semiconductor layer, and a source electrode and a drain electrode that, on the second nitride semiconductor layer, are opposingly disposed across the gate portion. The gate portion includes a third nitride semiconductor layer of a ridge shape that is formed on the second nitride semiconductor layer and contains an acceptor type impurity and a gate electrode that is formed on the third nitride semiconductor layer. A film thickness of the third nitride semiconductor layer is greater than 100 nm.

Nitride semiconductor device

A method for manufacturing nitride semiconductor device includes a second step of forming, on a gate layer material film, a gate electrode film that is a material film of a gate electrode, a third step of selectively etching the gate electrode film to form the gate electrodeof a ridge shape, and a fourth step of selectively etching the gate layer material film to form a semiconductor gate layerof a ridge shape with the gate electrodedisposed at a width intermediate portion of a front surface thereof. The third step includes a first etching step for forming a first portionA from an upper end to a thickness direction intermediate portion of the gate electrodeand a second etching step being a step differing in etching condition from the first etching step and being for forming a remaining second portionB of the gate electrode.

Method for manufacturing nitride semiconductor device and nitride semiconductor device

A semiconductor devicehas an electrode structure that includes source electrodes, a gate electrode, and drain electrodesdisposed on a semiconductor laminated structureand extending in parallel to each other and in a predetermined first direction and a wiring structure that includes source wirings, drain wirings, and gate wiringsdisposed on the electrode structure and extending in parallel to each other and in a second direction orthogonal to the first direction. The source wirings, the drain wirings, and the gate wiringsare electrically connected to the source electrodes, the drain electrodes, and the gate electrode, respectively. The semiconductor deviceincludes a conductive filmdisposed between the gate electrodeand the drain wiringsand being electrically connected to the source electrodes

Semiconductor device and method for producing same

A semiconductor chip includes a front surface and a back surface, a source pad, a drain pad and a gate pad on the front surface; a die pad under the semiconductor chip and bonded to the semiconductor chip; a source lead, electrically connected to the die pad; a drain lead and a gate lead, disposed on a periphery of the die pad; and a sealing resin. A plurality of vias for external connection are formed to connect to the source pad. A first subset of the plurality of vias for external connection is disposed along a first side of the source pad, and a second subset of the plurality of vias for external connection is disposed along a second side of the source pad, wherein the first and second sides are arranged adjacent to each other to form a first edge of the source pad.

Semiconductor device

A nitride semiconductor deviceincludes a first nitride semiconductor layerthat constitutes an electron transit layer, a second nitride semiconductor layerthat is formed on the first nitride semiconductor layer and constitutes an electron supply layer, a nitride semiconductor gate layerthat is disposed on the second nitride semiconductor layer, has a ridge portionA at least at a portion thereof, and contains an acceptor type impurity, a gate electrodethat is disposed at least on the ridge portion of the nitride semiconductor gate layer, a source electrodethat is disposed on the second nitride semiconductor layer and has a source principal electrode portionA parallel to the ridge portion, and a drain electrodethat is disposed on the second nitride semiconductor layer and has a drain principal electrode portionA parallel to the ridge portion. A length direction of the ridge portion is a [110] direction of a semiconductor crystal structure that constitutes the second nitride semiconductor layer.

A semiconductor device includes a lead frame, a transistor, and an encapsulation resin. The lead frame includes a drain frame, a source frame, and a gate frame. The drain frame includes drain frame fingers. The source frame includes source frame fingers. The drain frame fingers and the source frame fingers are alternately arranged in a first direction and include overlapping portions as viewed from a first direction. In a region where each drain frame finger overlaps the source frame fingers as viewed in the first direction, at least either one of the drain frame fingers and the source frame fingers are not exposed from the back surface of the encapsulation resin.

The present invention provides a semiconductor device for reducing parasitic inductance. The semiconductor device of the present invention includes: a semiconductor chip, including a front surface and a hack surface, and including a source pad, a drain pad and a gate pad on the front surface; a die pad, disposed under the semiconductor chip and bonded to the hack surface of the semiconductor chip; a source lead, electrically connected to the die pad; a drain lead and a gate lead, disposed on a periphery of the die pad; and a sealing resin, sealing the semiconductor chip, the die pad and each of the leads. At least one via for external connection is formed in the semiconductor chip to connect to the source pad, and the via for external connection is disposed on a circumferential portion of the semiconductor chip in perspective view.

There is provided a nitride semiconductor device that includes a first nitride semiconductor layer configured as an electron transit layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and configured as an electron supply layer, a ridge-shaped nitride semiconductor gate layer disposed on the second nitride semiconductor layer and including an acceptor-type impurity, and a gate electrode formed on the nitride semiconductor gate layer. The gate electrode includes a first metal film that is formed on the nitride semiconductor gate layer and is mainly made of Ti, and a second metal film that is formed on the first metal film and is made of TiN.

Nitride semiconductor device and method of manufacturing the same

A semiconductor device is provided with, a group-III nitride semiconductor layered structure that includes a heterojunction, an insulating layer which has a gate opening that reaches the group-III nitride semiconductor layered structure and which is disposed on the group-III nitride semiconductor layered structure, a gate insulating film that covers the bottom and the side of the gate opening, a gate electrode defined on the gate insulating film inside the gate opening, a source electrode and a drain electrode which are disposed to be spaced apart from the gate electrode so as to sandwich the gate electrode, a first conductive layer embedded in the insulating layer between the gate electrode and the drain electrode, and a second conductive layer that is embedded in the insulating layer above the first conductive layer in a region closer to the drain electrode side than the first conductive layer.

Growing community of inventors

Kyoto, Japan

Kentaro Chikamatsu