Other

Canon Kabushiki Kaisha

Tdk Corporation

Kenta Ono

Daisuke Yoshida

Makoto Endo

Daisuke Ueda

Hirobumi Tanaka

Shogo Murosawa

Satoko Ueda

Minoru Ogasawara

Tatsuya Kikuchi

Masato Yokosawa

An image pickup apparatus in which a cable is prevented from coming off a connecting terminal without requiring complicated operations. The image pickup apparatus comprising an image pickup apparatus main body, the connecting terminal provided in the image pickup apparatus main body and to which the cable is electrically connected, a grip belt that assists a user in holding the image pickup apparatus main body, and a cable clamp attachable to and detachable from the grip belt, wherein the cable clamp comprises a first holding portion that includes a U-shaped portion opened in a U shape and holds the grip belt and a second holding portion that includes a U-shaped portion opened in a U shape and holds the cable, and wherein the U-shaped portion of the first holding portion and the U-shaped portion of the second holding portion are opened in different directions.

Image pickup apparatus to which cable is connected, and cable clamp therefor

A method of manufacturing a semiconductor device, comprising bonding a first principal surface of a substrate to a supporting substrate through a light-to-heat conversion film, and removing a portion of the light-to-heat conversion film exposed on the supporting substrate. A method of manufacturing a semiconductor device, comprising forming a light-to-heat conversion film on a supporting substrate, bonding a semiconductor substrate to the supporting substrate, so that the light-to-heat conversion film extends outside the semiconductor substrate, performing an anti-contamination treatment on the light-to-heat conversion film, and separating the supporting substrate and the semiconductor substrate from each other.

Method of manufacturing semiconductor device

A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO(A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO.

Laminated type ceramic electronic parts

Growing community of inventors

Tokyo, Japan

Kenta Ono