Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Panasonic Holdings Corporation

Kenta Matsuyama

Satoshi Tohoda

Masato Shigematsu

Satoru Shimada

Taiki Hashiguchi

Kazunori Fujita

A solar cell includes: a semiconductor substrate which includes a first principal surface and a second principal surface; a first semiconductor layer of the first conductivity type disposed above the first principal surface; and a second semiconductor layer of a second conductivity type disposed below the second principal surface. The semiconductor substrate includes: a first impurity region of the first conductivity type; a second impurity region of the first conductivity type disposed between the first impurity region and the first semiconductor layer; and a third impurity region of the first conductivity type disposed between the first impurity region and the second semiconductor layer. A concentration of an impurity in the second impurity region is higher than a concentration of the impurity in the third impurity region, and the concentration of the impurity in the third impurity region is higher than a concentration of the impurity in the first impurity region.

Solar cell and solar cell module

A solar cell includes an n-type silicon substrate having a first main surface and a second main surface, an n-type first semiconductor layer disposed above the first main surface, a first intrinsic semiconductor layer disposed between the first main surface and the first semiconductor layer, a p-type second semiconductor layer disposed on the second main surface, and a second intrinsic semiconductor layer disposed between the second main surface and the second semiconductor layer. An oxygen concentration at an interface between the silicon substrate and the second intrinsic semiconductor layer is lower than an oxygen concentration at an interface between the silicon substrate and the second intrinsic semiconductor layer. An oxygen concentration at an interface between the second intrinsic semiconductor layer and the second semiconductor layer is higher than an oxygen concentration at an interface between the first intrinsic semiconductor layer and the first semiconductor layer.

Solar cell

Provided is a solar cell that can suppress loss of power generation performance of a solar cell module when shaded and a solar cell module having the solar cell. An n-type low-doped region and a first main-surface side highly doped region, which has an n-type dopant concentration higher than that in the n-type low-doped region, are provided in an n-type crystalline silicon substrate. The first main-surface side highly doped region is arranged between the n-type low-doped region and a p-type amorphous silicon layer.

A solar cell is made which has a first conduction-type crystalline silicon substrate having a texture provided on the surface, and an i-type amorphous silicon layer located on the surface of the crystalline silicon substrate, wherein the texture has a larger radius of curvature Rof root parts thereof than the radius of curvature Rof peak parts thereof. The crystalline silicon substrate has a first conduction-type highly-doped region containing a first conduction-type dopant on the surface thereof, and the dopant concentration in the first conduction-type highly-doped region is higher than that in the center in the thickness direction of the crystalline silicon substrate.

Solar cell and method for manufacturing solar cell

An n-type low-doped region and a first main-surface side highly doped region, which has an n-type dopant concentration higher than that in the n-type low-doped region, are provided in an n-type crystalline silicon substrate. The first main-surface side highly doped region is arranged between the n-type low-doped region and a p-type amorphous silicon layer.

Growing community of inventors

Osaka, Japan

Kenta Matsuyama