Taiheiyo Cement Corporation

National Institute of Advanced Industrial Science and Technology

Kenta Masuda

Masakazu Suzuki

Kouki Ichitsubo

Hideaki Tanaka

Kohei Kawano

Jun Kumasaka

Tomohisa Kato

Kiyoshi Nonaka

Atsushi Kumasaka

A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm/g to 1,000 cm/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.

Silicon carbide powder and method for producing silicon carbide single crystal

A particle formed of silica and carbon having a low impurity content and an excellent reactivity is provided. Also provided is a method of producing a silica and carbon-containing material including: (B) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon concentration within the liquid portion of at least 10 wt % with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (C) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution with a mineral acid so as to cause carbon and silicon within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the liquid substance so as to obtain a solid portion of a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion containing impurities.

Particles formed of silica and carbon, and method for producing mixture of silica and carbon

A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.

Silicon carbide powder and method for producing same

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Chiba, Japan

Kenta Masuda