Nissan Motor Company Limited

Renault S.a.s.

Kenta Emori

Shigeharu Yamagami

Tetsuya Hayashi

Jumpei Niida

Wei Ni

Emi Takahashi

Toshiharu Marui

Yuji Saito

A cooling device is provided with a heat sink having a plurality of fins, and a plasma actuator. Flow paths are formed between adjacent ones of the fins. The plasma actuator is provided away from the fins where the flow paths are formed. The plasma actuator has electrodes that are arranged offset in the flow path direction. The plasma actuator generates an induced air flow flowing in a direction of the flow path in the central region between adjacent fins.

Cooling device

A cooling device cools an electronic component using a plasma actuator provided with a dielectric, a first electrode arranged on one surface of the dielectric to generate an induced flow, and a second electrode arranged on the other surface of the dielectric, in which the electronic component and a third electrode are arranged in a flow direction of the induced flow, and a voltage applied to the third electrode is a voltage that generates a potential difference, which is capable of attracting the induced flow, between the first electrode and the third electrode.

A cooling apparatus including a heat sink to which a heat generating body is joined, a main flow generation device configured to generate a main flow for cooling the heat sink, and an induced flow generation device configured to electrically generate an induced flow. The induced flow generation device is provided to a support member facing the heat sink.

Cooling apparatus

The semiconductor device includes at least three semiconductor elements disposed directly or indirectly on a planar member and constituting an upper arm and a lower arm which perform ON and OFF action at mutually differential times; an upper-surface voltage applied region of each semiconductor element is configured to be narrower than an area of the aforementioned whole semiconductor element in planar view; and each semiconductor element is disposed so that the shortest distance between the semiconductor elements constituting the upper arm is formed so as to be longer than the shortest distance between the semiconductor element constituting the upper arm and the semiconductor element constituting the lower arm.

Semiconductor device with reduced thermal resistance

The semiconductor device includes: a substrate, an n-type drift region formed on a main surface of the substrate; a p-type well region, an n-type drain region and an n-type source region each formed in the drift region to extend from a second main surface of the drift region opposite to the first main surface of the drift region in contact with the substrate in a direction perpendicular to the second main surface; a gate groove extending from the second main surface in the perpendicular direction and penetrating the source region and the well region in a direction parallel to the first main surface of the substrate; and a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween, wherein the drift region has a higher impurity concentration than the substrate, and the well region extends to the inside of the substrate.

Semiconductor device and method of manufacturing the same

A semiconductor device () comprises: a semiconductor substrate (); a drift region () of a first conductivity type having a trench in part of an upper portion thereof and arranged on a first main surface of the semiconductor substrate (); an electric field reducing region () of a second conductivity type arranged, in a bottom portion of the trench, only around a corner portion and not in a center portion; an anode electrode () embedded in the trench; and a cathode electrode () arranged on a second main surface of the semiconductor substrate () which is opposite to the first main surface.

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Kanagawa, Japan

Kenta Emori