Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Kensuke Yasuda

Takeshi Yamamoto

Kazuaki Yamaura

Nobuyuki Toda

Shinji Kawahara

A photodetector according to an embodiment includes a plurality of cell regions disposed in an array, and an element isolation region provided between the cell regions, each of the cell regions including: a semiconductor layer having a first face and a second face opposite to the first face; a first semiconductor region of a first conductivity type provided in the semiconductor layer; a second semiconductor region of a second conductivity type provided between the first semiconductor region and the first face; an electrode in contact with the second semiconductor region; and a plurality of metal regions having a part surrounded by the first semiconductor region and another part surrounded by the second semiconductor region.

Photodetector

A light detection device is disclosed. A first cell and a second cell are set in the light detection device. The first cell and the second cell are mutually adjacent. The device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer being of a second conductivity type; a first member provided between the first cell and the second cell; a second member provided between the first member and the first cell; and a third member provided between the first member and the second cell. The first to third members are made of a material different from the first semiconductor layer and the second semiconductor layer.

Growing community of inventors

Yokohama Kanagawa, Japan

Kensuke Yasuda