Kioxia Corporation

Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Nissan Motor Company Limited

Kloxia Corporation

Envision Aesc Japan Ltd.

Kensuke Yamamoto

Masaru Koyanagi

Ryo Fukuda

Junya Matsuno

Kenro Kubota

Masato Dome

Kosuke Yanagidaira

Shouichi Ozaki

Kei Shiraishi

Fumiya Watanabe

Kazuhiko Satou

Satoshi Inoue

Manabu Watanabe

Nobutaka Chiba

Yasuhiro Hirashima

Fumihiro Miki

Takashi Sanada

Hideaki Tanaka

Masaaki Suzuki

Takashi Nakano

Tsuyoshi Tanabe

Hiroshi Deguchi

Takeshi Hioka

Mikihiko Ito

Yasuhiro Suematsu

Gentaro Kano

Hiromitsu Komai

Wataru Ogihara

Yousuke Hagiwara

Yohei Yasuda

Yumi Takada

Taichi Wakui

Youichirou Kondou

A semiconductor memory device includes a memory cell storing data; a signal pad inputting write data to the memory cell and from which read data read from the memory cell is output to an external controller; a first control pad receiving a first timing control signal from the external controller; and a second control pad outputting a second timing control signal to the external controller. In a first time period after a data out command is received, dummy data are output from the signal pad while the second timing control signal from the second control pad is toggling in response to toggling of the first timing control signal input to the first control pad. In a second time period after the first time period, read data are output from the signal pad while the second timing control signal is toggling in response to toggling of the first timing control signal.

Memory system

According to one embodiment, a semiconductor memory device includes: first and second circuit units, a driver circuit, an input/output pad, first and second power supply pads, and first and second interconnects. The first interconnect is configured to provide coupling between the first circuit unit and the first power supply pad. The second interconnect is configured to provide coupling between the second circuit unit and the first power supply pad and have no electrical coupling to the first interconnect.

Semiconductor memory device

A device includes a memory cell array configured to store data; and a signal propagation circuit configured to propagate a signal between the memory cell array and a host. The signal propagation circuit includes a first inverted signal output circuit, a second inverted signal output circuit including an input terminal connected to i) an output terminal of the first inverted signal output circuit and ii) an output terminal of the second inverted signal output circuit, a third inverted signal output circuit including an input terminal connected to i) the output terminal of the first inverted signal output circuit and ii) the output terminal of the second inverted signal output circuit, and a fourth inverted signal output circuit including an input terminal connected to i) an output terminal of the third inverted signal output circuit and ii) an output terminal of the fourth inverted signal output circuit.

Memory device

A semiconductor device includes a first circuit configured to receive a first signal, and output a first voltage to a first node in accordance with a voltage of the first signal being at a first level and output a second voltage to the first node in accordance with the voltage of the first signal being at a second level, the first voltage being higher than the second voltage. A second circuit is coupled to the first node and is configured to latch data based on a voltage of the first node; and a third circuit is coupled to the first node and is configured to output a third voltage to the first node while the first circuit is outputting the first voltage to the first node, and to output a fourth voltage to the first node while the first circuit is outputting the second voltage to the first node, the third voltage being lower than the first voltage, and the fourth voltage being higher than the second voltage.

Semiconductor device

A semiconductor device according to an embodiment includes: a logic control circuit to which a signal is input; a timing information storage circuit configured to store timing information related to a start timing of correction processing that corrects a duty cycle of the signal; and a sequencer configured to start execution of the correction processing based on the timing information when a command related to the execution of the correction processing is received.

Semiconductor device, memory system, and method of correcting duty cycle of output signal from semiconductor device

A semiconductor device includes a first chip and a second chip. The first chip includes a first circuit having a first output terminal. The second chip includes a second circuit having a second output terminal, which is electrically connected to the first output terminal via a first signal line. When the first chip and the second chip receive a first command, the second circuit calibrates an output impedance at the second output terminal through a first calibration operation based on an output impedance at the first output terminal.

Semiconductor device and memory system

A memory system outputs read enable signals RE and /RE during a period of a standby time tWHRnecessary for a process of output to a controller, and causes an output, circuit to output dummy data preset in signals DQS and /DQS.

A semiconductor memory device includes a memory cell array and a signal propagation circuit disposed on a propagation path of a signal or a control signal. The signal propagation circuit includes a first inverted signal output circuit; a second inverted signal output circuit including an input terminal connected to an output terminal of the first inverted signal output circuit; a third inverted signal output circuit including an input terminal connected to output terminals of the first inverted signal output circuit and the second inverted signal output circuit; a fourth inverted signal output circuit including an input terminal connected to an output terminal of the third inverted signal output circuit, and further including a terminal connected to output terminals of the third inverted signal output circuit and the fourth inverted signal output circuit.

A semiconductor storage device including an output pad, a first circuit connected to the output pad, a second circuit connected to the first circuit, a third circuit configured to output a first setting signal for controlling the first circuit accordance with a characteristic variation of the first circuit, and a fourth circuit configured to generate a second setting signal for controlling the second circuit in accordance with the first setting signal received from the third circuit and output the second setting signal to the second circuit.

Semiconductor storage device

According to an embodiment, a semiconductor device includes a first circuit, a second circuit, and a third circuit. The first circuit is configured to receive a first signal, and output a first voltage to a first node in accordance with a voltage of the first signal being at a first level and output a second voltage to the first node in accordance with the voltage of the first signal being at a second level. The first voltage is higher than the second voltage. The second circuit is coupled to the first node and configured to latch data based on a voltage of the first node. The third circuit includes a first inverter. The first inverter includes a first input terminal coupled to the first node and a first output terminal coupled to the first node.

In general, according to one embodiment, an output circuit includes first to third power supply lines, a pad, first to second transistors, and a first circuit. A first end of the first transistor is coupled to the first power supply line. A second end of the first transistor is coupled to the pad. A first end of the second transistor is coupled to the second power supply line. A second end of the second transistor is coupled to the pad. The first circuit is coupled to each of the third power supply line and a gate of the first transistor. In a first case, the first circuit applies a fourth voltage to the gate of the first transistor.

Output circuit

According to one embodiment, a semiconductor memory device includes: a memory cell array and a signal propagation circuit disposed on a propagation path of a signal or a control signal, wherein the signal propagation circuit includes: a first inverted signal output circuit; a second inverted signal output circuit including an input terminal connected to an output terminal of the first inverted signal output circuit; a third inverted signal output circuit including an input terminal connected to output terminals of the first inverted signal output circuit and the second inverted signal output circuit; a fourth inverted signal output circuit including an input terminal connected to an output terminal of the third inverted signal output circuit; and a fifth inverted signal output circuit including an input terminal connected to output terminals of the third inverted signal output circuit and the fourth inverted signal output circuit.

A non-volatile semiconductor memory device including: a first pad transmitting/receiving a data signal transmitted via a first signal line to/from a memory controller; a second pad transmitting/receiving a strobe signal transmitted via a second signal line to/from the memory controller, the strobe signal specifying a timing of transmitting/receiving the data signal; and a third pad receiving an output instruction signal via a third signal line from the memory controller, the output instruction signal instructing a transmission of the data signal; wherein the non-volatile semiconductor memory device outputs the data signal from the first pad to the memory controller, outputs the strobe signal from the second pad to the memory controller, performs a first calibration operation calibrating the data signal, and performs a second calibration operation calibrating the strobe signal, based on a toggle timing of the strobe signal associated with the output instruction signal.

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Yokohama Kanagawa, Japan

Kensuke Yamamoto