Tokyo Electron Limited

Kensuke Taniguchi

Yoshinari Hatazaki

Yoshihide Kihara

Toru Hisamatsu

Shinya Morikita

Alok Ranjan

Masanobu Honda

Peter Ventzek

Michiko Nakaya

Kiyohito Ito

Wakako Ishida

A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.

Treatment method

A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.

Plasma processing method and plasma processing apparatus

A method includes performing a first on phase including applying an SP pulse to an SP electrode to generate plasma, performing a second on phase after the first on phase, performing a corner etch phase after the second on phase, and performing a by-product management phase after the corner etch phase. The SP pulse terminates at the end of the first on phase. The second on phase includes applying a first BP pulse to a BP electrode coupled to a target substrate. The first BP pulse includes a first BP power level and accelerates ions of the plasma toward to target substrate. The corner etch phase includes applying a BP spike including a second BP power level greater than the first BP power level. The duration of the BP spike is less than the duration of the first BP pulse.

Pulsed capacitively coupled plasma processes

A plasma processing method performed using a plasma processing apparatus includes a first step of forming a first film on a pattern formed on a substrate and having dense and coarse areas, and a second step of performing sputtering or etching on the first film.

A method of selectively etching a first region Rmade of silicon oxide with respect to a second region Rmade of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region Rforming a recess; the first region Rconfigured to fill the recess; and a mask MK provided on the first region R. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.

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Miyagi, Japan

Kensuke Taniguchi