Fuji Electric Co., Ltd.

Mitsubishi Electric Corporation

Mipox Corporation

Kensuke Takenaka

Takeshi Tawara

Shinsuke Harada

Akihiro Koyama

Manabu Takei

Hidekazu Tsuchida

Koji Nakayama

Shinichiro Matsunaga

Tomohisa Kato

Yoshiyuki Yonezawa

Kenji Nakagawa

Tomonori Mizushima

Mitsuru Sometani

Seiji Mizutani

Kouichi Murata

Yuji Kiuchi

A silicon carbide semiconductor device has an active region and a termination structure portion disposed outside of the active region. The silicon carbide semiconductor device includes a semiconductor substrate of a second conductivity type, a first semiconductor layer of the second conductivity type, a second semiconductor layer of a first conductivity type, first semiconductor regions of the second conductivity type, second semiconductor regions of the first conductivity type, a gate insulating film, a gate electrode, a first electrode, and a second electrode. During bipolar operation, a smaller density among an electron density and a hole density of an end of the second semiconductor layer in the termination structure portion is at most 1×10/cm.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

A method of manufacturing a superjunction silicon carbide semiconductor device is provided, enabling a reduction of the number of times a combination of epitaxial growth and ion implantation for forming a parallel pn structure is performed. In the method of manufacturing the superjunction silicon carbide semiconductor device, forming an epitaxial layerof a second conductivity type on a front surface of a silicon carbide semiconductor substrateof a first conductivity type and selectively forming semiconductor regionsof the first conductivity type by implanting nitrogen ions in the epitaxial layer are repeated multiple times, thereby forming the parallel pn structure.

Super junction silicon carbide semiconductor device and manufacturing method thereof

There is provided a method that makes it possible to observe fine crystal defects using light of a visible region. The method includes illuminating a substrate with polarized parallel light and evaluating a crystal quality of at least a part of the substrate from an image obtained by light transmitted through or reflected by the substrate. The half width HW, the divergence angle DA, and the center wavelength CWL of the parallel light satisfy conditions given below3&#x2264;HW&#x2264;1000.1&#x2264;DA&#x2264;5250&#x2264;CWL&#x2264;1600

Method comprising evaluating substrate by polarized parallel light

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Kanagawa, Japan

Kensuke Takenaka