Fujifilm Corporation

Kensuke Morita

Makoto Muramatsu

Koji Wariishi

Akira Asano

Morio Yagihara

Katsuyuki Watanabe

Yutaka Adegawa

Masaya Nakayama

Kazutaka Takahashi

Kouji Tonohara

An insulating film forming composition, includes: a polymer compound obtained by polymerizing a cage-type silsesquioxane compound having two or more unsaturated groups as substituents; a heat-resistant organic polymer compound having a carbon-carbon unsaturated bond; and an organic solvent, and a method for producing an insulating film, includes: coating the insulating film forming composition on a substrate; and then curing the coating.

Insulating film forming composition and production method of insulating film

An antireflection film forming composition, includes: a polymerized product of Compound (I) having m number of RSi(O)units, in which m stands for an integer of from 8 to 16, and Rs each independently represents a non-hydrolyzable group, with the proviso that at least two of Rs each represents a vinyl- or ethynyl-containing group, wherein each of the RSi(O)units is linked to another RSi(O)unit while having an oxygen atom in common and constitutes a cage structure, and wherein, of solids contained in the composition, the polymerized product obtained by a polymerization reaction of Compound (I) amounts to 60 mass % or greater and Compound (I) amounts to 15 mass % or less.

Antireflection film forming composition, antireflection film and optical device

A process for selectively producing 4,9-dibromodiamantane includes a step of reacting diamantane with bromine in the presence of a Lewis acid and a solvent, wherein the solvent comprises a substituted or unsubstituted, straight-chain, branched-chain or cyclic saturated hydrocarbon containing from 3 to 10 carbon atoms, and a reaction solution after the step satisfies Formula (1):/()&#x3e;0.80 &#x2003;&#x2003;Formula (1)wherein A represents an area ratio (%) of 4,9-dibromodiamantane obtained by gas chromatography of the reaction solution, B represents an area ratio of diamantane, C represents a sum of an area ratio of 1-bromodiamantane and an area ratio of 4-bromodiamantane, D represents an area ratio of tribromodiamantane, and E represents a sum of an area ratio of 1,6-dibromodiamantane and an area ratio of 1,4-dibromodiamantane.

Process for producing 4,9-dibromodiamantane

A composition comprising: a polymerized substance of a compound (I) that contains m numbers of RSi(O)units, wherein m represents an integer of from 8 to 16; and R's each independently represents a non-hydrolysable group, provided that at least two among R's represent groups containing a vinyl group or an ethynyl group, and wherein each one of the RSi(O)units is connected to another one of the RSi(O)units by sharing an oxygen atom in each one of the RSi(O)units, so as to form a cage structure, and wherein within a solid component contained in the composition, a polymerized substance formed by a reaction of the compound (I) represents 60 mass % or more.

Composition, film and producing method therefor

A file is formed by coating a substrate with a film-forming composition including a compound having an alicyclic hydrocarbon structure and irradiating the coated composition with microwaves having a frequency of 5.8 GHz. An insulating film is formed by irradiating a film including a compound having a siloxane structure with microwave having a frequency of 5.8 GHz. These films possess excellent film properties such as dielectric constant and mechanical strength.

Film

An insulating film for semiconductor devices is obtained by curing, on a substrate, a high molecular compound obtained by polymerizing a cage-type silsesquioxane compound having two or more unsaturated groups as substituents and having a cyclic siloxane structure, wherein the structure of the cage-type silsesquioxane compound is not broken by curing, and the breakage of the cage structure can be detected by observing a peak at approximately 610 cmin Raman spectrum of the film after curing.

Insulating film

A composition for forming an insulating film comprising at least one of a compound represented by formula (1), a hydrolysate of the compound represented by formula (1) and a condensate of the compound represented by formula (1):ASiX&#x2003;&#x2003;(1)wherein n represents an integer of from 1 to 3; A represents an optionally substituted group containing a cage structure formed by 11 or more carbon atoms, and when n represents an integer of 2 or 3, A's are mutually same or different; and X represents a hydrolyzable group, and when n represents an integer of 1 or 2, X's are mutually same or different.

Silicon-containing compound, composition containing said compound, and insulating material

A film-forming composition comprising: a compound having a specific cage structure; a pore-forming agent; an adhesion promoter; and so on, an insulating film formed from the film-forming composition and an electronic device comprising the insulating film.

Film-forming composition, insulating material-forming composition, insulating film and electronic device

A composition for forming an insulating film comprising at least one of a compound represented by formula (I), a hydrolysate of the compound represented by formula (I) and a condensate of the compound represented by formula (I): wherein Rto Reach independently represents an organic group, and Rto Rare the same or different. And an insulating film obtained by a process, the process comprising using the compound represented by formula (I) as a starting material.

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Haibara-gun, Japan

Kensuke Morita