Mitsubishi Heavy Industries Limited

National Institute of Advanced Industrial Science and Technology

Mitsubishi Heavy Industries Machine Tool Co., Ltd.

Pal Corporation, Ltd.

Kensuke Ide

Takayuki Goto

Jun Utsumi

Takenori Suzuki

Masato Kinouchi

Takeshi Tsuno

Hideki Takagi

Satoshi Tawara

Masahiro Funayama

Yoichiro Tsumura

Masami Miura

Takayuki Kawano

Tetsuo Ichikizaki

Takeshi Nakahama

Yuuichi Kurashima

Akira Watanabe

Shinobu Kishikawa

Masuko Kushiyama

Keiichiro Tsutsumi

Mitsuhiko Izumi

Seiji Horiuchi

Masayuki Matsukuma

Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes and insulating layers and are respectively exposed to front surfaces, including a bonding interlayer which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes, between the front surfaces.

Room-temperature-bonded semiconductor device and manufacturing method of room-temperature-bonded semiconductor device

An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiOsubstrates) are bonded at room-temperature to have practical bonding strength.

Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.

Room temperature bonding apparatus and room temperature bonding method

A room-temperature bonding apparatus of the present invention includes: a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate; a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate; and a pressure welding mechanism configured to bond the first substrate and the second substrate by bring the first activation surface and the second activation surface contact, after the first activation surface and the second activation surface are irradiated. The room-temperature bonding apparatus can more uniformly irradiate to the first activation surface and the second activation surface, so that the first substrate and the second substrate can be more appropriately bonded with each other, compared with another room-temperature bonding apparatus which irradiates the first activation surface and the second activation surface by using one beam source.

Room-temperature bonding apparatus

A wafer bonding method includes: holding a first substrate with an upper holding mechanismby applying a voltage to the upper holding mechanism; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism; and dechucking the bonded substrate from the upper holding mechanismafter a voltage which attenuates while alternating is applied to the upper holding mechanism. By applying the voltage which attenuates while alternating to the upper holding mechanism, residual attracting force between the bonded substrate and the upper holding mechanismis reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.

Wafer bonding device and wafer bonding method

A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.

Bonding unit control unit and multi-layer bonding method

A room temperature bonding apparatus includes angle adjustment means supporting a first sample stage holding a first substrate so as to be able to change a direction of the first sample stage; a first driving device driving the first stage in a first direction; a second driving device driving a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table supporting the second sample stage in the first direction when the second substrate and the first substrate are brought into contact. The apparatus can impose a load exceeding a withstand load of the second driving device on the first and second substrates. Further, the apparatus uses angle adjustment means to change direction of the first substrate to be parallel with the second substrate and uniformly impose the larger load on a bonding surface.

Room temperature bonding apparatus

A room temperature bonding machine is provided with an evacuation apparatus, a gas supply apparatus, a pressure gauge, a cleaner apparatus, a pressure controller and a pressing mechanism. The evacuation apparatus evacuates gas from the chamber. The gas supply apparatus supplies introduction gas into the chamber. The pressure gauge measures the pressure in the chamber. The cleaner apparatus cleans first and second substrates in the chamber when said pressure is at a predetermined degree of vacuum. The pressure controller controls both of the evacuation apparatus and the gas supply apparatus so that the pressure is regulated to a target pressure. The pressing mechanism presses and bonds the first and second substrates when the pressure is set to said target pressure.

Room temperature bonding machine and room temperature bonding method

A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.

Manufcaturing method for room-temperature substrate bonding

A room temperature bonding apparatus according to the present invention is provided with a load lock chamber having an internal space which is pressure-reduced; and a cartridge arranged in the load lock chamber. The cartridge includes an island portion formed to contact a substrate when the substrate is put on the cartridge. A flow passage is formed for the island portion to connect a space between the cartridge and the substrate to outside when the substrate is put on the cartridge. Therefore, in the room temperature bonding apparatus can prevent making the substrate is moved to the cartridge due to gas when the internal space is pressure-reduced.

A room temperature bonding apparatus includes: an angle adjustment mechanism that supports a first sample stage holding a first substrate to a first stage so as to be able to change a direction of the first sample stage; a first driving device that drives the first stage in a first direction; a second driving device that drives a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table that supports the second sample stage in the first direction when the second substrate and the first substrate are brought into press contact with each other. In this case, the room temperature bonding apparatus can impose a larger load exceeding a withstand load of the second driving device on the first substrate and the second substrate. Further, the room temperature bonding apparatus can use the angle adjustment mechanism to change a direction of the first substrate such that the first substrate and the second substrate come into parallel contact with each other, and uniformly impose the larger load on a bonding surface.

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Room-temperature bonding method and room-temperature bonding apparatus including sputtering

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Room temperature bonding using sputtering

A plurality of representative points are selected from a group of points obtained as results of shape measurement of an object, respective principal curvatures are calculated at the representative points on the basis of positional relationships between the representative point and a plurality of points existing around the representative point, a line of curvature is created on the basis of the principal curvatures of the representative points and a curved surface is generated using this line of curvature.

Curved-surface generating method and program, and three-dimensional shape processing apparatus

A machine tool has a table body and a drive line on a bed. The table body is linearly movable via a guide member having a sliding or rolling guide surface. The drive line has a ball screw or the like, and moves the table body along the guide surface. A pair of guide members are provided at positions in point symmetry about the position of the center of gravity of the table body. Moreover, a pair of drive lines having the ball screws or the like are provided at positions in point symmetry about the position of the center of gravity of the table body. Alternatively, drive line having the ball screw or the like is provided at the position of the center of gravity of the table body.

Growing community of inventors

Tokyo, Japan

Kensuke Ide