Toyoda Gosei Co., Ltd.

Kensuke Hirano

Hironao Shinohara

In a semiconductor light emitting element having a sapphire substrate, and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate, the sapphire substrate includes a substrate top surface, a substrate bottom surface, first substrate side surfaces and second substrate side surfaces; plural first cutouts and plural second cutouts are provided at border portions between the first substrate side surface and the substrate top surface and between the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface, first lower semiconductor side surfaces and second lower semiconductor side surfaces; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface.

Semiconductor light emitting element, method for producing semiconductor light emitting element and light emitting device

In a semiconductor light emitting element () having a sapphire substrate (), and lower () and upper () semiconductor layers laminated on the sapphire substrate, the substrate includes a substrate top surface (), a substrate bottom surface (), first substrate side surfaces () and second substrate side surfaces (); plural first () and second () cutouts are provided at a border between the first substrate side surface, the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface (), first lower semiconductor side surfaces () and second lower semiconductor side surfaces (); plural first projecting portions () and plural first depressing portions () are provided on the first lower semiconductor side surface; and plural second protruding portions () and second flat portions () are provided on the second lower semiconductor side surface.

Growing community of inventors

Ichihara, Japan

Kensuke Hirano