Mitsubishi Materials Corporation

Mitsubishi Kinzoku Kabushiki Kaisha

Mitsubishi Jukogyo Kabushiki Kaisha

Mitsubishi Metal Corporation

Kensho Sahira

Michio Kida

Yoshiaki Arai

Naoki Ono

Akira Mitsuhashi

Hisataka Kawai

Hideo Kitamura

Ichiro Tsuji

Akikuni Nozoe

Akira Mimura

Nobuyoshi Kurauchi

Ikuo Okada

Koji Takahashi

Toshiki Takeiri

Saburo Wakita

Hiroshi Susukida

Toshio Kojima

Hitomi Itoh

Makoto Yuge

Shinichi Miyamoto

Yuusuke Arima

A rotating blade or stationary vane of a gas turbine which is made of a nickel alloy containing Cr, Co, Mo, W, Ta, Al, Ti, C, B, Zr, and one or both of Mg and Ca. Additionally, the alloy may contain Hf, Pt, Rh and Re.

Rotating blade or stationary vane of a gas turbine

A metallic implant base is coated with two bioactive ceramic layers. An inner bioactive ceramic layer is coated on the implant base. An outer bioactive ceramic layer is coated on the inner bioactive ceramic layer. The inner bioactive layer is vitrified at a ratio of not less than 50 volume percent, thereby improving the bonding of the inner bioactive layer to the metallic implant base and preventing migration of the metal ions from the metallic implant base. The outer bioactive ceramic layer is vitrified to a ratio of substantially less than 50 volume percent, thereby providing a desired porosity.

Bioactive ceramic coated surgical implant

To improve high-temperature strength, as well as increased resistance to wear due to sparking, a Ni-based alloy sparking plug electrode material for use in an internal combustion engine is provided. Such a Ni-based alloy sparking plug electrode material contain, by weight, from 3.1 to 4.3 of Al, from 0.5 to 1.5% of Si, from 0.45 to 0.65% of Mn, from 0.002 to 0.01% of C, from 0.005 to 0.05% of at least one of Mg and Ca, and, as necessitated, from to 2% of Cr, with the balance substantially Ni and inevitable impurities.

Ni-based alloy sparking plug electrode material for use in an internal

The improved nickel-base heat-resistant alloy consists of 13.1-15.0% Cr (all percentages that follows are by weight), 8.5-10.5% Co, 1.0-3.5% Mo, 3.5-4.5% W, 3.0-5.5% Ta, 3.5-4.5% Al, 2.2-3.2% Ti, 0.06-0.12% C, 0.005-0.025% B, 0.010-0.05% Zr and 1-100 ppm of Mg and/or Ca, in the optional presence of 0-1.5% Hf and/or 0-0.5% of at least one element of Pt, Rh and Re, with the remainder being Ni and incidental impurities. The alloy has high strength and high resistance to oxidation and corrosion at elevated temperatures and, hence, is suitable for use as a constituent material for machine parts that are to be exposed to elevated temperatures.

Nickel-base heat-resistant alloys

A Co-based alloy exhibits superior high-temperature strength and resistance properties. In one embodiment, the Co-based alloy contains, in weight percent, from about 0.1 to about 1.2 of C; from about 0.01 to about 2 of at least one of Si and Mn; from about 22 to about 37 of Cr; from about 5 to about 15 of Ni; from about 0.1 to about 3.5 of Re; with a balance being Co and incidental impurities. Co and C, Si, Mn, Cr, Ni, Re, B, Zr, W, Mo, Ta, and Nb impart high-temperature wear resistance to the alloy to withstand repeated temperature cycling in a glass spinnaret. In one embodiment of the present invention, Hf is added to improve molten glass corrosion resistance, while Y and other rare earth elements are added in alternate embodiments to improve high-temperature oxidation resistance. Percentages by weight are disclosed for enhanced high-temperature oxidation resistance, increased fluid wear resistance and enhanced molten glass corrosion resistance.

Enhanced Co-based alloy

An apparatus for growing a single crystal is disclosed which includes a double crucible assembly. The double crucible assembly has an outer crucible and an inner crucible disposed in the outer crucible. A support member is provided for supporting the inner crucible, and the support member is formed of an inorganic oxide non-reactive with silicon oxide. The upper end portion of the inner crucible may be formed of the same inorganic oxide. Alumina or mullite is suitable as the inorganic oxide. With the above construction, silicon single crystals obtained by the crystal growing apparatus will be free of contamination by carbon or heavy metals, and will exhibit excellent quality.

Apparatus for growing single crystals

An Ni base alloy for use in spark plug electrodes for internal combustion engines which consists essentially of, on a weight percent basis,

Ni base alloy for spark plug electrodes of internal combustion engines

In apparatuses for melting semiconductor material and growing single crystals of semiconductor material, the apparatus comprising:

Apparatus for process for growing crystals of semiconductor materials

A monocrystal rod utilized for producing the semiconductor device or solar cell includes a neck section, a main rod section and a shoulder section. The neck section is smaller in diameter than a seed crystal. The main rod section is formed integrally with the neck section and is larger in diameter than the neck section. The shoulder section is tapered for linking the neck section to the main rod section. The main rod section has a stopper section at the top portion of the main rod section, and the stopper section is larger than the main rod section. Also, an apparatus for preparing the monocrystal rod has a safety member for supporting upward the stopper section of the falling monocrystal rod. Further, a method of preparing the monocrystal rod includes the steps as follows. The seed crystal is pulled out from a melt in a crucible while rotating it. The speed of pulling the seed crystal is at first increased to grow the neck section whose diameter is smaller than the seed crystal, and then is gradually decreased to grow the shoulder section. Subsequently, the pulling speed is increased again so as to prevent further increase in diameter to grow the stopper section at the lower end of the shoulder section or at the top portion of the main rod section, and then is decreased again to grow the main rod section whose diameter is equal to a required diameter.

Monocrystal rod pulled from a melt

A monocrystal rod utilized for producing the semiconductor device or solar cell includes a neck section, a main rod section and a shoulder section. The neck section is smaller in diameter than a seed crystal. The main rod section is formed integrally with the neck section and is larger in diameter than the neck section. The shoulder section is tapered for linking the neck section to the main rod section. The main rod section has a stopper section at the top portion of the main rod section, and the stopper section is larger than the main rod section. Also, an apparatus for preparing the monocrystal rod has a safety member for supporting upwards the stopper section of the falling monocrystal rod. Further, a method of preparing the monocrystal rod includes the steps as follows. The seed crystal is pulled out from a melt in a crucible while rotating it. The speed of pulling the seed crystal is at first increased to grow the neck section whose diameter is smaller than the seed crystal, and then is gradually decreased to grow the shoulder section. Subsequently, the pulling speed is increased again so as to prevent further increase in diameter to grow the stopper section at the lower end of the shoulder section or at the top portion of the main rod section, and then is decreased again to grow the main rod section whose diameter is equal to a required diameter.

A crystal growing apparatus includes a crucible, a feed pipe and a pulling mechanism. The crucible serves to melt a crystalline material. The feed pipe serves to cause the crystalline material to fall into the crucible to charge the crucible with the crystalline material. The pulling mechanism serves to pull a single-crystal from the molten material in the crucible. The feed pipe has a lower end positioned slightly above the surface of the molten material in the crucible and including a plurality of baffle plates mounted on an inner peripheral wall thereof in longitudinally spaced relation to one another. The baffle plates are arranged so that a pitch defined between adjacent two baffle plates decreases toward the lower end of the feed pipe.

Apparatus for growing crystals

A quartz double crucible assembly utilized for producing silicon crystalline rods is manufactured as follows. First, outer and inner quartz crucibles are prepared by means of arc fusion method. Then, the outer and inner crucibles are received in a vessel accommodated in a heat-treating furnace. Subsequently, the crucibles are heated to a prescribed elevated temperature. Thus, the outer and inner crucibles are caused to join together, and a double crucible assembly is produced.

Method of manufacturing quartz double crucible assembly

There is disclosed a method for plastic-working a heat-resistant alloy containing boron, which is in the form of an ingot. The ingot of the alloy is first subjected to hot working. Subsequently, annealing, acid-washing and cold working are carried out on the hot-worked blank material to provide a worked product. The hot working and the annealing are both carried out at a temperature ranging from 1,000.degree. C. to 1,150.degree. C.

Method for plastic-working ingots of heat-resistant alloy containing

An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure. The apparatus also includes at least one fluid passage for permitting the melted material to flow between the inner and outer crucibles when the multi-wall structure is defined by the inner and outer crucibles, a holder for holding the inner crucible, a heater disposed so as to surround the susceptor for heating the material in the crucible assembly, and a drive mechanism operable to move at least one of the holder and the susceptor vertically between a coupled position where the holder is supported by the susceptor in such a manner that the inner crucible is so placed within the outer crucible as to define the multi-wall structure and a released position where the holder is disengaged from the susceptor in such a manner that the inner crucible is released from the outer crucible. There is also provided a process which may be conveniently carried out in the apparatus described above.

Apparatus and process for growing crystals of semiconductor materials

In a method for pulling a single crystal, employing a double crucible assembly, the dopant concentration of the molten raw material in an inner crucible prior to the pulling, is raised to a value higher than the dopant concentration C of the molten raw material in the inner crucible at the steady state. Furthermore, at the initial stage of the pulling, the raw material having a dopant content ratio of no greater than kC is introduced into the outer crucible at a rate greater than the rate of decrease of the molten raw material within the inner crucible during the pulling, to achieve a concentration ratio of dopant between the inner and outer crucibles at a target value. Subsequently, the raw material having kC as the dopant content ratio is introduced into the outer crucible, at a rate equal to the rate of decrease of the molten raw material during the pulling.

Growing community of inventors

Yono, Japan

Kensho Sahira