Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Kioxia Corporation

Kensei Takahashi

Fumiki Aiso

Ryota Fujitsuka

Tomohisa Iino

Takashi Asano

Takayuki Matsui

Masayuki Tanaka

Hajime Nagano

Kazuhiro Matsuo

Yoichi Minemura

Satoshi Wakatsuki

Masao Shingu

Nobuhito Kuge

A semiconductor storage device includes first and second stacked bodies, a first semiconductor layer, a first charge storage layer, a conductive layer, and a first silicon oxide layer. The first stacked body includes first insulation layers and first gate electrode layers that are alternately stacked in a first direction. The first semiconductor layer extends in the first stacked body in the first direction. The first charge storage layer is provided between the first semiconductor layer and the first gate electrode layers. The conductive layer is provided between the first stacked body and the second stacked body and extends in the first direction and a second direction. The first silicon oxide layer is provided between the conductive layer and the first gate electrode layers. The first silicon oxide layer containing an impurity being at least one of phosphorus, boron, carbon, and fluorine.

Semiconductor storage device

A semiconductor storage device includes a semiconductor substrate; an insulating layer provided on the semiconductor substrate; a barrier metal layer provided on the insulating layer; an aluminum compound layer provided on the barrier metal layer; an amorphous layer provided on the aluminum compound layer and including a material that vaporizes upon its chemical reaction with fluorine; and a metal layer provided on the amorphous layer.

Semiconductor storage device having an amorphous layer

A wafer conveying apparatus conveying a wafer onto a supporting table in manufacturing a semiconductor. A first arm retains the wafer to move to an upper region of the supporting table, and is retracted from the upper region of the supporting table after the wafer is elevated. A second arm contacts the wafer by an opening provided in the supporting table to elevate the wafer, and lowers the wafer to place the wafer on the supporting table.

Wafer conveying apparatus and wafer conveying method

According to the embodiment, a vaporization system includes a vaporizer, a body, a sensor, a moving mechanism, and a supplier. The vaporizer includes a plurality of containers which can store powdered solid materials. The body in a vacuum state can house the vaporizer. The sensor detects a residue of the solid materials stored in a plurality of the containers respectively. The moving mechanism, on the basis of a detection result of the sensor, moves the plurality of the containers respectively between a first position located inside the vaporizer, and a second position located outside of the vaporizer. A supplier supplies the solid material to the container located in the second position among the plurality of the containers.

Vaporization system

In one embodiment, a semiconductor manufacturing apparatus includes a container to contain wafers, and supporting tables provided in the container so as to be stacked on one another, and each including a supporting face that comes into contact with a wafer to support the wafer. The apparatus further includes supporting columns to join the supporting tables together and provided at positions where the supporting columns are contained inside outer circumferences of the supporting tables. The apparatus further includes a gas feeder to feed a gas to the wafers on the supporting tables, and a gas discharger to discharge the gas fed to the wafers on the supporting tables. Each of the supporting tables includes a first upper face as the supporting face, and a second upper face provided so as to surround the first upper face at a level higher than a level of the first upper face.

Semiconductor manufacturing apparatus with supporting columns and tables

A semiconductor storage device according to an embodiment includes a plurality of memory cells, a first film, and a second film. The memory cells are placed at intervals in a first direction on a semiconductor substrate. The first film is placed continuously in the first direction above the memory cells so as to cover all of the memory cells and including mainly metal oxide. The second film is placed on the first film and including mainly silicon nitride or silicon dioxide.

Semiconductor storage device and manufacturing method thereof

A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A tunnel insulating film is provided on the semiconductor substrate. A charge accumulation layer is provided on the tunnel insulating film. An intermediate dielectric film is provided on the charge accumulation layer. A control gate electrode is formed on the intermediate dielectric film. The intermediate dielectric film includes a laminated film of silicon oxide films of multiple layers and silicon nitride films of at least one layer, and a silicon oxynitride film provided between adjacent ones of the silicon oxide films and the silicon nitride films.

Growing community of inventors

Kuwana, Japan

Kensei Takahashi