Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Kensaku Yano

Takao Kon

Masayuki Kakegawa

Akihiko Furukawa

Ryohei Miyagawa

Yoshinori Iida

Hidenori Shibata

Hiroshi Washida

Hirotaka Nakano

Kenji Takahashi

Yoshio Yamaoka

A photo chemical reaction apparatus comprises a vacuum container partitioned into a reaction chamber and a carrier chamber by use of partition board. The partition board has an opening into which a carrier tray can be detachably inserted so as to cause the rection chamber to be hermetically sealed. The carrier tray has a substrate holder opposite to a light-penetrating window. A reaction gas flows between this window and a substrate to be processed mounted on the substrate holder.

Photo chemical reaction apparatus

In a solid-state image sensor, a semiconductor structure having storage sections and a transfer section is formed in a substrate and an insulating film is formed on the substrate. Charge transfer electrodes are buried in the insulating film above the transfer section and pixel electrodes are formed on the insulating film and are electrically connected to the storage sections through electrodes, respectively. A photoconductive film for converting to incident light rays to electrical charges is formed on the insulating film, a barrier layer is formed on the film and a transparent electrode is formed on the barrier layer. Electrodes and semiconductor layers are buried in the insulating film such that each of the semiconductor layers is partly contacted to the photoconductive film, thereby a diode structure is formed by the photoconductive film, the semiconductor layer and the pixel electrodes.

Solid-state image sensor

In a solid state image sensor, first electrodes corresponding to pixels are arranged in a predetermined interval on a CCD structure. The first electrodes are electrically connected to storage sections of the CCD structure and electrically insulated from a transferring section of the CCD structure. Second electrodes are arranged in a predetermined interval on a flat surface of an insulating layer formed on the first electrodes and are electrically connected to the first electrodes. A photoconductive film for converting incident light rays to charges is formed on the second electrodes. A third electrode is formed on the photoconductive film through a barrier layer. Fourth electrodes which are electrically connected to the photoconductive film and electrically insulated from the second electrodes are barried in the insulating layer. An external voltage is applied to the fourth electrode.

Solid state image sensor with means for removing excess photocharges

A secondary electron multiplication target includes first and second porous layers laminated on a signal electrode. The first porous layer is formed of MgF.sub.2 which, having a high secondary electron emitting ratio and a dielectric constant of 6 or less, produces a great number of secondary electrons in response to photoelectrons incident thereupon across the signal electrode. The second porous layer is formed of carbon which has a low secondary electron emitting ratio and hence a high crossover potential, as well as a dielectric constant of 6 or less.

Secondary electron multiplication target

A patterned layer article for semiconductor devices or stripe filters of color television cameras characterized by using, as a base, a protective layer of an etching rate smaller than that of a thin layer for controlling the etching depth of the thin layer, and this protective layer, particularly consists of oxides of rare earth elements such as yttrium oxide, and scandium oxide.

Patterned layer article and manufacturing method therefor

A patterned multi-layer structure for a stripe filter used for a photoelectric pickup tube, comprises a protective layer preventing a substrate from being etched by reactive sputter etching and a multi-layer optical filter formed on the protective layer patterned by reactive sputter etching into a stripe pattern. The etching rate of the protective layer by an etching gas agent is not greater than that of the multi-layer filter.

Growing community of inventors

Yokohama, Japan

Kensaku Yano