Sharp Kabushiki Kaisha Corporation

Panasonic Intellectual Property Management Co., Ltd.

Nobuhiko Swaki

Kensaku Yamamoto

Toshio Hata

Tsuyoshi Fujii

Taiji Morimoto

Mayuko Fudeta

Masaki Tatsumi

Takeshi Kamikawa

Norikatsu Koide

Satoshi Ohuchi

Hideo Ohkoshi

Hitoshi Yoshida

Shigehiro Yoshiuchi

Takami Ishida

Nobuhiko Sawaki

Kazuo Goda

Takanori Aoyagi

Takahiro Shinohara

Ryosuke Meshii

A wiring-buried glass substrate includes a glass substrate and a first wiring. The glass substrate includes a first surface, a second surface perpendicular to the first surface, and a third surface facing the first surface. The first wiring includes a first pillar portion and a first beam portion. The first pillar portion extends in a first direction perpendicular to the first surface of the glass substrate. The first beam portion is connected to a first surface of the first pillar portion and extends to a second direction perpendicular to a second surface of the glass substrate. The first wiring is buried in the glass substrate. The first surface of the first beam portion is exposed from a third surface of the glass substrate.

Wiring-buried glass substrate, and inertial sensor element and inertial sensor using same

An angular velocity sensor element includes a fixing part, an extension part, a twisted extension part, a drive vibrator, a detection vibrator, and a counter beam. The extension part has a first end coupled to the fixing part, and a second end. The twisted extension part has a first end coupled to the second end of the extension part, and a second end. The drive vibrator has a first end coupled to the second end of the twisted extension part, and a second end. The drive vibrator is provided with a drive electrode. The detection vibrator is coupled to the second end of the drive vibrator, and is provided with a first detection electrode. The counter beam is coupled to the second end of the twisted extension part, disposed substantially parallel to the drive vibrator, and configured to vibrate in a direction opposite to a vibration direction of the drive vibrator.

Angular velocity sensor element and angular velocity sensor using same

A sensor includes a sensor element, defined in an XY plane, including a first member, a second member having a first portion extending from the first member in a positive Y axis direction, a second portion extending from the first portion in a positive X axis direction and a third portion extending from the second portion in a negative Y axis direction, and a third member having a first section and a second section having a rectangular shape in a top view respectively. The first portion, the second portion and the third portion extend along a periphery of the first section in the top view respectively. The second section is connected to the third portion and extends from the first section in a positive Y axis direction. A length of the second member is larger than a length of the third member in a positive X axis direction.

Angular velocity sensor

An angular velocity detection device includes an outer frame including fixed portions, outer beam portions connected to the fixed portions, a sensing part surrounded by the outer frame with first slit therebetween, and a joint connecting the outer frame and the sensing part. The sensing part includes an inner beam portion, a flexible portion, and a detector. The inner beam portion has a hollow region inside and is square-shaped when viewed from above. The flexible portion is formed in the hollow region of the inner beam portion, and is connected to the inner edge of the inner beam portion. The detector is disposed in the flexible portion. The first slit is formed to surround the sensing part excluding the joint.

Angular velocity detection device and angular velocity sensor including the same

An inertial force sensor that can suppress fluctuation of detection sensitivity even if an external stress is applied to the inertial force sensor. Angular velocity sensor (), that is, an inertial force sensor includes ceramic substrate (), lower lid () adhering to ceramic substrate () with adhesives (and) (first adhesives), and sensor element () adhering to lower lid () with adhesives (and) (second adhesives). The elastic moduli of adhesives (and) are smaller than those of adhesives (and).

Angular velocity sensor for suppressing fluctuation of detection sensitivity

A detection element has: first and second fixed parts; first and second vertical beams each connected at first and second ends to the first and second fixed parts, respectively; a horizontal beam connected at first and second ends to centers of the first and second vertical beams, respectively; and four arms each connected at a first end to the horizontal beam and having a weight formed on a second end. The first vertical beam has a first slit formed nearer the first fixed part with respect to its center, a second slit formed nearer the second fixed part with respect to its center, and a coupling portion between these slits. The second vertical beam has a third slit formed nearer the first fixed part with respect to its center, a fourth slit formed nearer the second fixed part with respect to its center, and a coupling portion between these slits.

Angular velocity sensor and detection element used therein

An angular velocity sensor includes a sensor element having a shape defined in an XYZ space, and can detect an angular velocity about a Z axis. The sensor element includes a support body extending in a direction of an X axis, an arm connected with the support body, and a weight connected with the arm. The arm has a first end connected with the support body and a second end connected with the weight. The arm has substantially a J-shape including a first arm portion extending in a direction of a Y axis from the first end to a first corner, a second arm portion extending in the direction of the X axis from the first corner to a second corner, and a third arm portion extending in the direction of the Y axis from the second corner to the second end. The length of the arm in the direction of the X axis is larger than the length of the weight in the direction of the X axis. This angular velocity sensor can improve the sensibility to angular velocity about the Z axis.

A light emitting device including a III-V group compound semiconductor includes a first stacked body and a second stacked body. The first stacked body includes a III-V group compound semiconductor stacked body, and a reflection layer, a first diffusion suppressing layer and a first metal layer formed on one main surface of the III-V group compound semiconductor stacked body. The second stacked body includes a semiconductor substrate and a second metal layer. The first stacked body and the second stacked body are joined by the first metal layer and the second metal layer, and by the first diffusion suppressing layer, diffusion of atoms between the reflection layer and the first metal layer is suppressed. Therefore, a III-V group compound semiconductor device having high efficiency of light emission to the outside per chip and manufacturing method thereof can be provided.

III-V group compound semiconductor light emitting device and manufacturing method thereof

A nitride semiconductor light emitting diode chip includes a transparent substrate and a nitride semiconductor stacked-layer structure formed on the upper surface of the substrate, the nitride semiconductor stacked-layer structure including a light-emitting layer and a plurality of other semiconductor layers, the substrate having an arbitrary crystallographic main surface and having a thickness of more than 120 &#x3bc;m, thereby providing an improved efficiency of extracting light from the chip. At least one of the division planes of the chip may be angled relative to a plane perpendicular to the main surface of the substrate and the lower surface of the substrate may have a smaller area than an upper region of the nitride semiconductor stacked-layer structure to further improve the efficiency of extracting light from the chip.

Nitride semiconductor light-emitting diode chip and method of manufacturing the same

A light emitting device of III&#x2013;V group compound semiconductor includes a first stack and a second stack. The first stack includes a semiconductor stack including a light emitting layer. A multilayered reflective structure for reflecting light from the light emitting layer and a first metal bonding-layer are successively formed on the semiconductor stack. The second stack includes a second metal bonding-layer. The first and second stacks are bonded together by bonding the first and second metal bonding-layers to each other. The multilayered reflective structure includes a transparent conductive oxide layer and a reflective metal layer adjacent thereto in this order from the side of the semiconductor stack. The thickness of the transparent conductive oxide layer is adjusted to control the light emission characteristics.

Light emitting device of III-V group compound semiconductor and fabrication method therefor

A gallium nitride compound semiconductor light emission device includes: a substrate; an n-type electrode region comprising an n-type transmissive electrode; a gallium nitride compound semiconductor multilayer structure including an active layer; and a p-type electrode region comprising a p-type transmissive electrode. The p-type transmissive electrode and the n-type transmissive electrode transmit light which is generated in the active layer and reflected from the substrate so that the light exits the light emission device.

Nitride gallium compound semiconductor light emission device

A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode are formed at the layered body, each having the desired reflectance. The thickness of the translucent substrate and the nitride layered body stacked thereon of the semiconductor light emitting element is 60 &#x3bc;m to 460 &#x3bc;m.

Semiconductor light emitting element and semiconductor light emitting device

A light emitting semiconductor device includes a silicon substrate and a compound semiconductor layer disposed on a main plane of the silicon substrate and represented by a general expression InGaAlN, wherein x+y+z=1, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;z&#x2266;1. The silicon substrate has a groove having an oblique plane corresponding to a plane inclined relative to the substrate's main plane by 62 degrees or a plane inclined relative to the inclined plane in any direction within three degrees, and on the oblique plane a plurality or quantum well layers different in thickness are stacked.

Light emitting semiconductor device and method of fabricating the same

A semiconductor light-emitting device includes: a substrate; a semiconductor layer including at least one light-emitting region; a metal layer having a light transmitting characteristic; a first fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light; and an oxide semiconductor layer formed between the metal layer and the first fluorescent material layer, and having a light-transmitting characteristic.

Growing community of inventors

Osaka, Japan

Kensaku Yamamoto