Sumitomo Electric Industries, Limited

Sharp Kabushiki Kaisha Corporation

Sony Corporation

Koha Co., Ltd.

Other

Sumitomo Electric Printed Circuits, Inc.

Kensaku Motoki

Takuji Okahisa

Seiji Nakahata

Ryu Hirota

Naoki Matsumoto

Mototaka Taneya

Shigetoshi Ito

Takayuki Yuasa

Masaki Ueno

Katsushi Akita

Takeshi Kamikawa

Koji Uematsu

Yoshihiro Ueta

Hitoshi Kasai

Mitsuru Shimazu

Yoshiki Miura

Akinori Koukitu

Zenpei Tani

Hisashi Seki

Masato Matsushima

Kouji Uematsu

Hideaki Nakahata

Shinsuke Fujiwara

Yuhzoh Tsuda

Fumitaka Sato

Hideyuki Ijiri

Shin Hashimoto

Yoshika Kaneko

Teruyoshi Takakura

Shunsuke Fujita

Osamu Goto

Tsuyoshi Tojo

Tsunenori Asatsuma

Koshi Tamamura

Shigetaka Tomiya

Toshimasa Kobayashi

Kunihiro Takatani

Kikurou Takemoto

Takashi Kyono

Manabu Shiozaki

Hideki Matsubara

Masaya Ishida

Hirohisa Saito

Yoshihiro Akahane

Tatsuya Ryowa

Tatsuya Nishimoto

Toshihiko Takebe

Yukiko Morishita

Toru Matsuoka

An LED module according to the present invention is an LED module including a plurality of light-emitting diodes, wherein the plural light-emitting diodes are disposed only on a lateral surface of a right cone, a right pyramid, a truncated right cone, or a truncated right pyramid; the lateral surface has an inclination angle of 55&#xb0; or more and 82&#xb0; or less with respect to a bottom surface; the plural light-emitting diodes have light-emitting surfaces substantially parallel to the lateral surface; and angles formed between projection lines of lines normal to light-emitting surfaces of adjacent light-emitting diodes or adjacent ones of grouped light-emitting diodes, the projection lines being drawn on the bottom surface, are all equal to each other and are 72&#xb0; or less.

LED module including flexible printed circuit board with adhesive layers and LED lighting fixture

Disclosed is a gallium nitride crystal substrate having a top surface, a bottom surface, regions of higher oxygen concentrations measured by SIMS, and other regions of lower oxygen concentrations measured by SIMS. The top surface is a C-plane surface. The ratio of the highest oxygen concentration to the lowest oxygen concentration is equal to or more than fifty.

Oxygen-doped gallium nitride crystal substrate

Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Oxygen-doped {20-21}, {1-101}, {1-100}, {11-20} or {20-22} surface n-type gallium nitride crystals are obtained.

Oxygen-doped gallium nitride single crystal substrate

A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S, an AlN buffer layeris grown. In step S, at a time t, a source gas Gcontaining hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactorto grow the AlN buffer layeron a primary surface. The AlN buffer layeris so called a low-temperature buffer layer. After a start of film formation of the buffer layer, in step Ssupply of hydrogen (H) is started at a time t. At the time t, H, N, TMA, and NHare supplied into the growth reactor. A supply amount of hydrogen is increased between times tand t, and at the time tthe increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t, H, TMA, and NHare supplied into the growth reactor

Method for forming epitaxial wafer and method for fabricating semiconductor device

Oxygen doping method to gallium nitride single crystal substrate

A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support basehaving a primary surfaceof monoclinic gallium oxide, and a laminate structureof Group III nitride. A semiconductor mesa of the laminate structureincludes a low-temperature GaN buffer layer, an n-type GaN layer, an active layerof a quantum well structure, and a p-type gallium nitride based semiconductor layer. The p-type gallium nitride based semiconductor layerincludes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surfaceof the gallium oxide support baseis inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide. Owing to this inclination, the gallium nitride based semiconductor epitaxially grown on the primary surfaceof the gallium oxide support base has a flat surface.

Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer

A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 &#x3bc;m or more.

Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device

Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S, a buffer layercomprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surfaceof a gallium oxide substrate. After the growth of the buffer layer, while supplying a gas G, which contains hydrogen and nitrogen, into a growth reactor, the gallium oxide substrateand the buffer layerare exposed to an atmosphere in the growth reactorat 1050 Celsius degrees. A Group III nitride semiconductor layeris grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layercan be comprised of GaN and AlGaN. When the Group III nitride semiconductor layeris formed of these materials, excellent crystal quality is obtained on the modified buffer layer

Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device

A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

Fabrication method and fabrication apparatus of group III nitride crystal substance

Nitride semiconductor laser device including growth-inhibiting film at dislocation concentrated region

Seeds are implanted in a regular pattern upon an undersubstrate. An AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x3c;x+y&#x2266;1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.

[object Object]

A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InGaN (0.15&#x2266;X&#x3c;1, where X is a strained composition). The basal plane of the gallium nitride based semiconductor region is inclined at an inclination angle within the range of 15 degrees or more, and 85 degrees or less with reference to a {0001} plane or a {000-1} plane of a hexagonal system group III nitride. The basal plane in this range is a semipolar plane.

Group-III nitride light-emitting device

A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 &#x3bc;m and not more than 450 &#x3bc;m, and has a light absorption coefficient of not less than 7 cmand not more than 68 cmfor light in the wavelength range of not less than 375 nm and not more than 500 nm. A fabricating method of the GaN crystal substrate, and a light-emitting device fabricated using the GaN crystal substrate are also provided.

GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device

The present invention is a nitride semiconductor device including an n-type gallium nitride single crystal substrate, an epitaxially grown nitride film on the substrate, and electrodes deposited on a top and a bottom of the substrate. In order to produce the substrate, oxygen is doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride bulk crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride bulk crystal, and eliminating the seed crystal from the bulk crystal.

Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate

Growing community of inventors

Itami, Japan

Kensaku Motoki