International Business Machines Corporation

Sony Corporation

Sony Electronics Inc

Kensaku Ida

Son Van Nguyen

Darryl D Restaino

Sarah L Lane

Takeshi Nogami

Eric Gerhard Liniger

Jia Lee

A low k dielectric stack having an effective dielectric constant k, of about 3.0 or less, in which the mechanical properties of the stack are improved by introducing at least one nanolayer into the dielectric stack. The improvement in mechanical properties is achieved without significantly increasing the dielectric constant of the films within the stack and without the need of subjecting the inventive dielectric stack to any post treatment steps. Specifically, the present invention provides a low k dielectric stack that comprises at least one low k dielectric material and at least one nanolayer present within the at least one low k dielectric material.

Low k dielectric CVD film formation process with in-situ imbedded nanolayers to improve mechanical properties

A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter 'SiCOH') in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, &#x2014;CH&#x2014; crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH+CHstretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCHbonding of greater than about 2.0, and a peak area for Si&#x2014;O&#x2014;Si bonding of greater than about 60%, and a porosity of greater than about 20%.

Advanced low dielectric constant organosilicon plasma chemical vapor deposition films

A method is provided for making an inter-level dielectric for a microelectronic device formed on a substrate. The method begins by forming first and second spacer layers over a substrate layer. The spacer layers are formed from a sacrificial dielectric material. Next, first and second dielectric layers are formed on the first and second spacer layers, respectively, such that each of the first and second dielectric layers is separated by one of the spacer layers. The first and second dielectric layers each include a first and second dielectric component. The second dielectric component is a sacrificial dielectric material. At least a portion of the second dielectric component is removed to thereby form voids in the first and second dielectric layers. At least a portion of the sacrificial dielectric material in the first and second spacer layers is also removed to thereby form voids in the first and/or second spacer layers.

Composite inter-level dielectric structure for an integrated circuit

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Wappingers Falls, NY, United States of America

Kensaku Ida