Tokyo Ohka Kogyo Co., Ltd.

Kenri Konno

Jun Iwashita

Daiju Shiono

Daichi Takaki

Yoshiyuki Utsumi

Takahiro Dazai

Isamu Takagi

Tomoyuki Hirano

Masatoshi Arai

Akiya Kawaue

Masahito Yahagi

Daisuke Kawana

Kensuke Matsuzawa

Tatsuya Fujii

Kenta Suzuki

Kazushige Dohtani

Yoshiyuki Utsume

A composition for nanoimprinting including a siloxane polymer which includes a polymerizable group polymerized by irradiation with light; a polymerization initiator; and a fluorine-containing polymeric compound in which the fluorine-containing polymeric compound has a constituent unit represented by the following formula (f1-1) in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Rfand Rfeach independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Rfand Rfmay be the same as or different from each other, nfrepresents an integer of 1 to 5, and Rfrepresents an organic group including a fluorine atom. 

Composition for nanoimprint and nanoimprint pattern forming method

A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the &#x3b1;-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.

Method of forming resist pattern and negative tone-development resist composition

A compound represented by formula (I). In the formula, Rrepresents a hydrocarbon group of 1 to 10 carbon atoms; Z represents a hydrocarbon group of 1 to 10 carbon atoms or a cyano group; provided that Rand Z may be mutually bonded to form a ring; X represents a divalent linking group having any one selected from &#x2014;O&#x2014;C(&#x2550;O)&#x2014;, &#x2014;NH&#x2014;C(&#x2550;O)&#x2014; and &#x2014;NH&#x2014;C(&#x2550;NH)&#x2014; on a terminal that comes into contact with Q; p represents an integer of 1 to 3; Q represents a hydrocarbon group having a valency of (p+1), provided that, when p is 1, Q may be a single bond; Rrepresents a single bond, an alkylene group which may have a substituent or an arylene group which may have a substituent; q represents 0 or 1; r represents an integer of 0 to 8; and Arepresents a metal cation or an organic cation. 

Compound, radical polymerization initiator, method for producing compound, polymer, resist composition, and method for forming resist pattern

A resist composition including a base component containing a polymer (A1) having a structural unit (a5) containing a group represented by general formula (a5-0-1) or (a5-0-2), wherein the amount of the monomer that derives the structural unit (a5) is not more than 100 ppm relative to (A1). In the formulas, each of Qand Qrepresents single bond or divalent linking group, R, Rand Rrepresent organic groups, and Rand Rmay be bonded to each other to form a ring in combination with the sulfur atom, provided that &#x2014;R&#x2014;S(R)(R) has a total of only one aromatic ring or has no aromatic rings, Vrepresents a counter anion, Arepresents an organic group containing anion, and Mrepresents an organic cation having a valency of m, wherein m represents an integer of 1 to 3, provided that Mhas only one aromatic ring or has no aromatic rings. 

Resist composition for EUV or EB, and method of forming resist pattern

A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2). 

Resist composition, method of forming resist pattern, polymeric compound, and compound

A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the &#x3b1;-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid. 

Resist composition, method of forming resist pattern and polymeric compound

A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) shown below, a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a structural unit (a6) which generates acid upon exposure (wherein Rrepresents a hydrogen atom, an alkyl group or a halogenated alkyl group; W represents &#x2014;COO&#x2014;, &#x2014;CONH&#x2014; or a divalent aromatic hydrocarbon group; Yand Yrepresents a divalent linking group or a single bond; R'represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R&#x2032;represents a monovalent aliphatic hydrocarbon group; and Rrepresents an &#x2014;SO&#x2014; containing cyclic group). 

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Kawasaki, Japan

Kenri Konno