Applied Materials, Inc.

Quantum Global Technologies LLC

Kenneth Tsai

Joseph Yudovsky

Steve G Ghanayem

Hong Peng Wang

Chien-Teh Kao

Quyen Pham

Maitreyee Mahajani

Ilya Perlov

Patricia M Liu

Eugene Gantvarg

Semyon Sherstinsky

Ken Kaung Lai

Toshiyuki Nakagawa

Ronald Lloyd Rose

Calvin R Augason

Avi Tepman

Salvador P Umotoy

Lawrence Chung-Lai Lei

Sergio Edelstein

Asaf Schlezinger

Son Trinh

Yongxiang He

Be Van Vo

Hui Zheng

Jesus G Garcia, Iii

Daniel M Deyo

Tung Bach

A method of cleaning metal-containing deposits from a metal surface of a process chamber component includes immersing the metal surface in an electrochemical cleaning bath solution. A negative electrical bias is applied to the metal surface to electrochemically clean the metal-containing deposits from the metal surface. The cleaning method is capable of removing metal-containing deposits such as tantalum-containing deposits from the metal surface substantially without eroding the surface, and may be especially advantageous in the cleaning of components having textured surfaces.

Electrochemical removal of tantalum-containing materials

Apparatus and methods for detecting residue on a glass substrate and method of use are disclosed. The apparatus comprises a substrate support, a sensor, a controller and a peripheral device in communication with the controller. The apparatus measures the height or thickness of a main surface and an edge delete surface of a substrate to determine if film residue is present on the edge delete surface.

Method and apparatus for residue detection in the edge deleted area of a substrate

A guard for an electrostatic chuck includes a ceramic annulus that has an inner surface shaped to fit around a circumference of the electrostatic chuck, and an outer surface having (i) a top portion with a recessed trench and (ii) a side portion. A metal coating is provided on the top portion of the outer surface.

Guard for electrostatic chuck

An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.

Resonant chamber applicator for remote plasma source

An effluent monitoring apparatus comprising an energizing cell adapted to receive an effluent, a gas energizer that is capable of energizing the effluent in the cell thereby emitting a radiation, a radiation permeable window that is spaced apart from the wall of the cell by a distance d that is sufficiently high to reduce a deposition of effluent residue from the energized gas on the window , and a detector to detect the radiation.

Monitoring an effluent from a chamber

A method and arrangement for lifting lowering and centering a substrate on a surface employs lift pins have conical tips. A capture range is provided by the conical tips to capture and center misaligned wafers. One or more of the pins are inclined in certain embodiments to enhance the alignment capability of the lift pins. The inclined lift pins, when retracting into a support member at an angle, move a supported substrate horizontally into proper alignment.

Apparatus and method for aligning a substrate on a support member

An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate. The guide pins also mate with alignment bores formed in the shadow ring so that, as the support member moves into the processing position, the inner surfaces of the guide pins abut abutment surfaces in the alignment bores and align the shadow ring on the support member and over the substrate. A hanger member supports and aligns the shadow ring between processing of each substrate.

Apparatus and method for aligning and controlling edge deposition on a substrate

An apparatus and methods for an upgraded CVD system providing a remote plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides apparatus for an easily removable, conveniently handled, and relatively inexpensive, robust microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. The present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a remote plasma for efficiently cleaning the chamber.

Method for improved remote microwave plasma source for use with substrate processing system

A gas delivery method and apparatus for directing a purge gas to the edge of a substrate at an angle to a linear divergence from the center of the substrate. The apparatus directs a purge gas from a supply source over a deflection surface, having one or more grooves angled relative to a linear divergence from the center of the substrate, to the edge of the substrate. Preferably, the gas is delivered to the edge of the substrate at an angle between about 10 and 90 degrees to a linear divergence from the center of the substrate.

Apparatus and method for delivering a gas

Apparatus for improved remote microwave plasma source for use with

A gas delivery apparatus for directing a flow of gas at the edge of a substrate at an angle to the radial direction of the substrate. The apparatus directs the gas from a gas orifice, and over a plurality of grooves that are angled relative to the radial direction of the substrate. Preferably, the resultant flow of gas flows at an angle of between 10 and 90 degrees relative to the radial direction of the substrate.

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Emerald Hills, CA, United States of America

Kenneth Tsai