Allegro Microsystems, LLC

Kenneth Snowdon

Maxim Klebanov

Sundar Chetlur

Cory Voisine

Hsuan-Jung Wu

Aaron Cook

Virag V Chaware

John Waranowski

An apparatus including; a substrate; an isolator that is formed over the substrate, the isolator including a silicon shield layer that is formed between a first buried oxide (BOX) layer and a second BOX layer; a silicon layer having an oxide trench structure formed therein, the oxide trench structure being arranged to define a first silicon island and a second silicon island; a first electronic circuit that is formed over the first silicon island; and a second electronic circuit that is formed over the second silicon island, the first electronic circuit being electrically coupled to the first electronic circuit.

Dual circuit digital isolator

An apparatus, comprising: a substrate; a coupling capacitor that is formed over the substrate; and an isolator that is formed between the substrate and the coupling capacitor, the isolator including: (a) an MP-well layer, (b) a first well layer, (c) an epi tub layer that is nested in the MP-well layer and the first well layer, and (d) a second well layer that is nested in the epi tub layer.

A sensor integrated circuit includes a disturb immune memory configured to store data and a digital processor coupled to the disturb immune memory and including a main register. The digital processor is configured to perform one of a fast reset or slow reset of the main register according to a level of a supply voltage to the integrated circuit. The fast reset includes resetting the main register according to the data stored in the disturb immune memory and the slow reset includes resetting the main register according to a default state.

Supply voltage disturbance immunity for digital circuits

A high voltage driver includes a high-side output transistor circuit, a differential to single-ended (D2SE) converter connected to a gate of the high-side output transistor circuit, wherein the D2SE is supplied by a first and a second supply voltage, and a high voltage translator connected to the D2SE converter. The D2SE converter and the translator circuit are used to clamp a voltage at the gate of the high-side transistor circuit to be the first supply voltage less the second supply voltage.

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Stratham, NH, United States of America

Kenneth Snowdon