Applied Materials, Inc.

Other

Applied Materiels, Inc.

Kenneth S Collins

Kartik Ramaswamy

Andrew Nguyen

Hiroji Hanawa

Shahid Rauf

James D Carducci

Michael Robert Rice

Amir Hamed Al-Bayati

Craig A Roderick

Biagio Gallo

John R Trow

Jennifer Y Sun

Douglas A Buchberger, Jr

Douglas Buchberger

Jeffrey S Marks

David Walter Groechel

Leonid Dorf

Ren-Guan Duan

Ajit Balakrishna

Chan-Lon Yang

Steven Lane

Yang Yang

Dan Maydan

Zhigang Chen

Peter R Keswick

Steven C Shannon

Tsutomu Tanaka

Matthew L Miller

Li Xu

Jie Yuan

Kallol Bera

Gerald Z Yin

Yue Guo

Jay D Pinson, Ii

Richard Charles Fovell

David N Wang

James P Cruse

John M White

Tetsuya Ishikawa

Kam S Law

Hamid Tavassoli

Cissy S Leung

Yan Ye

Daniel John Hoffman

Ilya Perlov

Salvador P Umotoy

Abhilash J Mayur

Dean C Jennings

Vijay Parihar

Walter R Merry

Raymond Hoiman Hung

Zheng John Ye

Masato M Toshima

Dennis Stanley Grimard

Ananda H Kumar

Shamouil Shamouilian

Arnold Kholodenko

Kadthala Ramaya Narendrnath

Ankur Agarwal

Ming Xu

Nicolas J Bright

Senh Thach

Martin Jeffrey Salinas

Satoru Kobayashi

Imad Yousif

Mei Yin Chang

Brian C Lue

Alexander M Veytser

Yogananda Sarode Vishwanath

Jian Ding

Ying Di Zhang

John C Forster

Joseph Yudovsky

Sasson Roger Somekh

Majeed Foad

Michael D Willwerth

Lawrence C Lei

Kevin Griffin

Dermot Cantwell

Robert W Wu

Benjamin Schwarz

Evans Yip Lee

Srinivas D Nemani

Michael S Barnes

Vijay D Parkhe

Thorsten B Lill

Valentin Nikolov Todorow

Jun Zhao

Tom K Cho

Samer Banna

Keiji Horioka

Chentsau Chris Ying

Eswaranand Venkatasubramanian

Peter I Porshnev

Gerald Zheyao Yin

Martin A Hilkene

Claes H Bjorkman

David Palagashvili

Hong Sheng Yang

Hongqing Shan

Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. The first and second gas flows comprise a process gas mixture and/or an independent gas injection (IGI) mixture.

Plasma chamber with multiphase rotating independent gas cross-flow with reduced volume and dual VHF

Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes: a pedestal having a first side configured to support a substrate and a second side opposite the first side; a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are disposed between the plurality of substrate lift pins and respective ones of a plurality of substrate lift pin openings in the pedestal; and vacuum lines that extend from the plurality of substrate lift pin openings and that are configured to pump down the plurality of substrate lift pin openings.

Substrate support gap pumping to prevent glow discharge and light-up

A processing chamber includes a chamber body defining an interior volume and including an access port. A cathode assembly is configured to generate a plasma within the interior volume. A chamber liner includes one or more inner notch structures to engage with one or more components of the chamber body. The chamber liner is configured to move between a loading position and an operation position. When the chamber liner is in the loading position, the interior volume is accessible by the access port. When the chamber liner is in the operation position, the chamber liner at least partially encloses the interior volume.

Continuous liner for use in a processing chamber

The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Symmetric VHF source for a plasma reactor

Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a method of operating a processing chamber includes causing a chamber liner within the processing chamber to move to a loading position to allow a substrate to be inserted through an access port of the processing chamber into an interior volume of the processing chamber. The method further includes causing the chamber liner to move to an operation position that blocks the access port after the substrate has been inserted into the interior volume. The method further includes generating a plasma using a cathode assembly.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Methods and apparatus for processing a substrate

Portable canopy

Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a processing chamber comprises a chamber body defining an interior volume and comprising an access port for inserting a substrate into the interior volume; a cathode assembly configured to generate a plasma within the interior volume; and a chamber liner comprising a smooth interior surface that is radially symmetric about a vertical axis of the chamber body. The chamber liner is configured to move between a loading position and an operation position.

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly. The intra-chamber electrode assembly includes an insulating frame, a first plurality of coplanar filaments that extend laterally through the plasma chamber between the ceiling and the workpiece support along a first direction, and a second plurality of coplanar filaments that extend in parallel through the plasma chamber along a second direction perpendicular to the first direction. Each filament of the first and second plurality of filaments includes a conductor at least partially surrounded by an insulating shell. A first RF power source supplies a first RF power to the conductor of the intra-chamber electrode assembly.

Plasma reactor with electrode filaments extending from ceiling

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxide

A processing tool for a plasma process includes a chamber body that has an interior space that provides a plasma chamber and that has a ceiling and an opening on a side opposite the ceiling, a workpiece support to hold a workpiece such that at least a portion of a front surface of the workpiece faces the opening, an actuator to generate relative motion between the chamber body and the workpiece support such that the opening moves laterally across the workpiece, a gas distributor to deliver a processing gas to the plasma chamber, an electrode assembly comprising a plurality of coplanar filaments extending laterally through the plasma chamber between the workpiece support and the ceiling, each of the plurality of filaments including a conductor, and a first RF power source to supply a first RF power to the conductors of the electrode assembly to form a plasma.

Plasma reactor with electrode assembly for moving substrate

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Symmetric plasma process chamber

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an electrode assembly comprising a plurality of conductors spaced apart from and extending laterally across the workpiece support in a parallel coplanar array, a first RF power source to supply a first RF power to the electrode assembly, and a dielectric bottom plate between the electrode assembly and the workpiece support, the dielectric bottom plate providing an RF window between the electrode assembly and the plasma chamber.

Plasma reactor with electrode array in ceiling

A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

Ion-ion plasma atomic layer etch process

Growing community of inventors

San Jose, CA, United States of America

Kenneth S Collins