Basf Se Corporation

Kenneth Rushing

Yuzhuo Li

Michael Lauter

Yongqing Lan

Bastian Marten Noller

Diana Franz

Vijay Immanuel Raman

Christof Kujat

Mario Brands

Zhenyu Bao

Daniel Kwo-Hung Shen

Karpagavalli Ramji

Albert Budiman Sugiharto

Roland Böhn

Bastian Noller

Ning Gao

A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (&#x2014;COOR), sulfonate (&#x2014;SOR), sulfate (&#x2014;O&#x2014;SOR), phosphonate (&#x2014;P(&#x2550;O)(OR)(OR)), phosphate (&#x2014;O&#x2014;P(&#x2550;O)(OR)(OR)), carboxylic acid (&#x2014;COOH), sulfonic acid (&#x2014;SOH), sulfuric acid (&#x2014;O&#x2014;SO&#x2014;), phosphonic acid (&#x2014;P(&#x2550;O)(OH)), phosphoric acid (&#x2014;O&#x2014;P(&#x2550;O)(OH)) moiety, or their deprotonated forms, Ris alkyl, aryl, alkylaryl, or arylalkyl Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising a polymeric polyamine

Abrasive articles containing solid abrasive particles (A) selected from the group consisting of inorganic particles, organic particles and inorganic-organic hybrid particles (a1) having an average primary particle size of from 1 to 500 nm as determined by laser light diffraction and having electron donor groups (a2) chemically bonded to their surface are provided. The said solid abrasive particles (A) are distributed throughout or on top of or throughout and on top of a solid matrix (B). A method for manufacturing abrasive articles and a method for processing substrates useful for fabricating electrical and optical devices are provided. The said methods make use of the said abrasive articles.

Abrasive articles, method for their preparation and method of their use

A chemical-mechanical polishing ('CMP') composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors

An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, &#x2014;the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, &#x2014;a lower SER than at its start and the same or essentially the same MRR as at its start or&#x2014;a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process

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Paw Paw, MI, United States of America

Kenneth Rushing