International Business Machines Corporation

Other

Kenneth Raymond Carter

James L Hedrick

Robert Dennis Miller

Craig Jon Hawker

Do Yeung Yoon

Willi Volksen

Richard Anthony DiPietro

Michael A Gaynes

Matthew Earl Colburn

Dirk Pfeiffer

Stephen L Buchwalter

Victor Yee-Way Lee

Gary Miles McClelland

John Campbell Scott

Daniel Joseph Dawson

Victor Y Lee

Dale Curtis McHerron

Eric Gerhard Liniger

John Patrick Hummel

Luisa Dominica Bozano

Robert F Cook

Martha Alyne Harbison

Jeffrey Curtis Hedrick

Mark Whitney Hart

Martha Inez Sanchez

Bernhard Pogge

Hugh Ralph Brown

Hyuk-Jin Cha

Sung-Mog Kim

Headphones

The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning

A deep fryer cooking apparatus includes a base that has an upper end and a lower end. A container c has a bottom wall and a perimeter wall that is attached to and extends upwardly from the bottom wall. The container is positioned on the upper end of the base. A plurality of dividing walls is attached to the bottom and perimeter walls and vertically extends from the bottom wall to a position adjacent to a top edge of the perimeter wall. The dividing walls divide the container into a plurality of compartments. A heating assembly is attached to the base to selectively heat the container. A plurality of mesh baskets each has a size and shape approximately conforming to a size and shape of one of the compartments. Each of the mesh baskets includes a grip for removal of the mesh baskets from a respective one of the compartments.

Deep fryer cooking apparatus

Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning

A convertible and drapable fabric article for use in a vehicle. The fabric includes a first fabric half and a second fabric half separated by an intermediate section exhibiting a plurality of parallel spaced fold lines. The intermediate section supports the fabric article upon a ledge associated with a door window opening of the vehicle in a first configuration, and such that the first half drapes over an exterior of the vehicle adjacent the window opening. At least one element is associated with at least one of the first and second fabric halves, these typically being releasably attachable magnets to support the paws of a canine perched upon the door window opening and extending across an open window. The fabric article is further converted to a second configuration whereby hook-and-loop fasteners associated with extending straps secure the fabric halves to seat back and seat bottom interior locations of the vehicle.

Combination draping canine fabric article and seat cover for use with a vehicle

A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the 'on' state, the 'off' state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity.

Memory device and method of making the same

A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the 'on' state, the 'off' state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity. The multi-stable element is stable, cyclable, and reproducible in both the &#x201c;on&#x201d; state and the &#x201c;off&#x201d; state. The storage medium has a relatively high resistance in both its on and off states. Consequently, a dense array can be fabricated without significant cross-talk between adjacent elements. No patterning of the layer of storage medium is required.

Non-volatile multi-stable memory device and methods of making and using the same

High density circuitry and metallic patterns are grown from polymer that has been patterned using a contact molding process. The patterned polymer is either intrinsically seedable or treated to make it seedable, e.g., it may be seeded with metallic seed ions, such as Pd ions. The patterned polymer is placed in an electroless deposition bath, with metal being plated onto its surface. Using these methods, metal (e.g, copper) may be deposited onto substrates of either organic or inorganic dielectric materials. The dielectric materials may comprise epoxy resins, ceramics, semiconductors (Si), glass, and silicon oxide.

Method of forming metallized pattern

A process for forming a portion of an integrated circuit includes placing a layer of material on a substrate, in which the material includes a polymeric composition or a precursor to a dielectric composition. The material is contacted with a stamping surface having relief structures that define a pattern, so that a patterned layer is formed as a result of the contact, which may include heating the material to mold it. A metal film or layer is then deposited onto the patterned layer. The metal can then be planarized to form a layer of an integrated circuit. A decomposable or sacrificial polymer is preferably included in the material, so that porous dielectric material is formed, thereby leading to a lower dielectric constant of the end product.

Method of fabricating one or more tiers of an integrated circuit

A method of encapsulating a circuit assembly including a chip; a substrate; at least one solder joint which spans between the chip and the substrate forming an electrically conductive connection between the chip and the substrate by applying an encapsulant adjacent the solder joint, wherein the encapsulant comprises a thermoplastic polymer formed by ring opening polymerization of a cyclic oligomer.

Method of encapsulating a circuit assembly

A novel dielectric composition is provided that is useful in the manufacture of integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by imidizing and curing an oligomeric precursor compound comprised of a central polybenzoxazole, polybenzothiazole, polyamic acid or polyamic acid ester segment end-capped at each terminus with an aryl-substituted acetylene moiety such as an ortho-bis(arylethynyl)aryl group, e.g., 3,4-bis(phenylethynyl)phenyl. Integrated circuit devices, integrated circuit packaging devices, and methods of synthesis and manufacture are provided as well.

Dielectric compositions, preparation thereof, and integrated circuit devices fabricated therewith

Process for forming an integrated circuit

The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.

Process for manufacture of integrated circuit device using inorganic/organic matrix comprising polymers of three dimensional architecture

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San Jose, CA, United States of America

Kenneth Raymond Carter