Calyxo Gmbh

Kenneth R Kormanyos

Norman W Johnston

Nicholas Alan Reiter

Frank Becker

John Bohland

Michael Bauer

Robert Fischer

Hubert Joachim Frenck

The invention relates to a process for producing a glass sheetcoated with a semiconductor material, which comprises the steps (a) production of a glass strip in a float bathcontaining liquid tin; (b) discharge of the glass strip from the float bathand optionally coating of the glass strip with a transparent, electrically conductive intermediate layer; (c) transfer of the uncoated or coated glass strip into a deposition chamberfor the physical deposition of the semiconductor material from the gas phase; and (d) coating of the coated or uncoated glass strip from step (c) with the semiconductor material by physical deposition of the semiconductor material from the gas phase at a gas pressure of at least 0.1 bar. The invention additionally relates to an apparatus for producing a glass strip coated with a semiconductor material, a process for producing a solar cell or a solar module and also a solar cell or a solar module which can be obtained by this process.

Process and apparatus for producing a glass sheet coated with a semiconductor material

A process for coating a substrate at atmospheric pressure is disclosed, the process comprising the steps of vaporizing a mass of semiconductor material within a heated inert gas stream to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at the substrate, the substrate having a temperature below the condensation temperature of the semiconductor material thereby depositing a layer of the semiconductor material onto a surface of the substrate, extracting undeposited semiconductor material; and circulating the undeposited semiconductor material into the fluid mixture having a temperature above the condensation temperature.

Thin-film deposition and recirculation of a semi-conductor material

A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.

Atmospheric pressure chemical vapor deposition

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Berkey, OH, United States of America

Kenneth R Kormanyos