Skyworks Solutions, Inc.

Kenneth Norman Warren

Philip Howard Thompson

Reza Kasnavi

Ying Shi

Srivatsan Jayaraman

Jonathan Christian Crandall

Ethan Chang

Yalin Jin

Omar Mustafa

David Scott Whitefield

Circuitry, modules, devices, and methods for integrating front-end carrier aggregation architecture are disclosed. In some embodiments, a method can include providing a packaging substrate configured to receive a plurality of components. The method can also include providing a front-end architecture implemented on the packaging substrate, the front-end architecture including a switching assembly configured to provide switching for two or more frequency bands, the switching assembly including at least one coupler configured to couple a signal associated with the switching assembly, and a diplexer circuit including a first filter configured to pass a first frequency band, a second filter configured to pass a second frequency band, and a first electrostatic discharge network configured to dissipate electrostatic energy associated with the first and second frequency bands from the front-end architecture.

Devices and methods related to integrated front-end architecture modules for carrier aggregation

Circuitry, modules and devices for integrating front-end carrier aggregation architecture, are disclosed. In some embodiments, a front-end architecture includes a switching assembly configured to provide switching for two or more frequency bands. In some embodiments, the switching assembly includes at least one coupler configured to couple a signal associated with the switching assembly. The front-end architecture can also include a diplexer circuit including a first filter configured to pass a first frequency band, a second filter configured to pass a second frequency band, and a first electrostatic discharge network configured to dissipate electrostatic energy associated with the first and second frequency bands from the front-end architecture.

Integrated front-end architecture modules for carrier aggregation

Apparatus and methods for level shifting in a radio frequency system are provided. In certain configurations, a radio frequency system includes a level shifter operable to provide level shifting to an input signal. The level shifter is biased by a bias voltage and powered by a supply voltage and a charge pump voltage. The radio frequency system further includes a charge pump configured to provide the charge pump voltage and to receive a mode signal operable to enable the charge pump in a first state and to disable the charge pump in a second state. The radio frequency system further includes a level shifter control circuit configured to control the bias voltage to track the charge pump voltage when the mode signal is in the first state, and to control the bias voltage with the supply voltage when the mode signal is in the second state.

Apparatus and methods for level shifting in a radio frequency system

Apparatus and methods for controlling radio frequency (RF) switches are disclosed. Provided herein are apparatus and methods for controlling RF switches. In certain configurations, an RF system includes a charge pump for generating a charge pump voltage, an RF switch, a level shifter for turning on or off the RF switch, and a level shifter control circuit for controlling the level shifter. The charge pump receives a mode signal used to enable or disable the charge pump. Additionally, the level shifter receives power in part from the charge pump voltage, and controls the RF switch based on a switch enable signal. The level shifter control circuit receives the mode signal and biases the level shifter with a bias voltage that changes based on a state of the mode signal.

Apparatus and methods for controlling radio frequency switches

A spark gap device includes an optional insulating layer formed on a substrate, a metal layer formed on a surface of the insulating layer, a solder resist layer formed on a surface of the metal layer, and first and second contacts. The metal layer includes a central portion and a peripheral portion separated by an air gap that surrounds the central portion of the metal layer and exposes the insulating layer. The solder resist layer includes a central portion disposed on the central portion of the metal layer having a first opening exposing a central region of the central portion of the metal layer, and a peripheral portion disposed on the peripheral portion of the metal layer having a second opening exposing a peripheral region of the peripheral portion of the metal layer. The first contact is formed in the first opening and the second contact is formed in the second opening.

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Anamosa, IA, United States of America

Kenneth Norman Warren