Semiconductor Manufacturing International (shanghai) Corporation

Hyundai Electronics America, Inc.

Kenneth Miu

Can Zhong

Jianchang Liu

Leong Seng Tan

Yuan Tang

Hsingya Arthur Wang

Jein-Chen Young

Haike Dong

Aaron Yip

The present invention provides a method of decreasing program disturb in memory cells, comprising: finding an initial programming condition that ensure programming memory cell normally; selecting one parameter from the initial programming condition as a variable for the program disturb test; performing the program disturb test to the memory cell for at least two values of the variable; obtaining a programming condition with minimum program disturb based on the result of the program disturb test; and applying the programming condition with minimum program disturb as the programming condition for memory cell. The method according to the present invention can minimize the program disturb for the memory cell and can be performed easily.

Method of decreasing program disturb in memory cells

The present invention provides a method for decreasing program disturb in memory cells, comprising: finding an initial programming condition that ensures programming memory cell normally; selecting two parameters from the initial programming condition as variables for a program disturb test; performing the program disturb test to the memory cell for at least two combined values of the variables; obtaining a programming condition with minimum program disturb based on the result of the program disturb test; and applying the programming condition with minimum program disturb as the programming condition for memory cell. The method according to the present invention can minimize the program disturb in memory cells and can be performed easily.

Method for decreasing program disturb in memory cells

Apparatus is provided to facilitate the process of bulk preprogramming each of the cells in a flash memory or a subblock of a flash memory. In the process, the source and drain of each cell to be preprogrammed is biased such that current need not be flowing between the source and drain through the cell's channel region for charge to be transferred between the cell's channel region and the cell's floating gate. In a specific embodiment, the sources and drains are left floating without any particular bias voltage and the control gates of the cells are set to between 9 and 12 volts above the substrate and held there for about 10 milliseconds (ms). In an alternate embodiment, the sources and drains of all of the cells to be preprogrammed are biased to the same potential, which is a negative voltage, ground, or a positive voltage.

Method and apparatus for bulk preprogramming flash memory cells with

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Fremont, CA, United States of America

Kenneth Miu