Hewlett-packard Development Company, L.p.

Other

Hewlett-packard Company

Kenneth Michael Kramer

Chien-Hua Chen

Eric Lee Nikkel

Jeffrey Scott Obert

Steven David Leith

James McKinnell

Daniel A Kearl

Kenneth A Diest

Andrew L Van Brocklin

Peter James Fricke

Kurt M Ulmer

Tony S Cruz-Uribe

Andrew Koll

Adel Jilani

Martha A Truninger

Neal W Meyer

David Punsalan

Dennis M Lazaroff

James E Ellenson

In one embodiment, a fluid ejector structure includes: a chamber for containing a fluid; a flexible membrane forming one wall of the chamber; a plurality of piezoelectric elements; a backing operatively connected to the piezoelectric elements such that an expansion and/or contraction of a piezoelectric element causes the piezoelectric element to bend; a rigid plate overlaying a center portion of the membrane; a post coupling the piezoelectric elements to the plate through the backing such that a movement of each piezoelectric element toward the chamber is transmitted to the plate through the post. The plate is configured to transmit movement of the post to the membrane in a rigid, or substantially rigid, piston-like manner.

Fluid ejector structure

A semiconductor package includes a substrate having a first surface portion in a cavity. The first surface portion includes an artificially formed grass structure. The package includes a getter film formed over the grass structure.

Semiconductor package with getter formed over an irregular structure

A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

Methods for controlling feature dimensions in crystalline substrates

A method of forming an opening through a substrate having a first side and a second side opposite the first side includes extending spaced etch stops into the substrate from the first side, etching into the substrate between the spaced etch stops, and etching into the substrate from the second side toward the first side to the spaced etch stops. Etching into the substrate between the spaced etch stops includes forming a first portion of the opening and etching into the substrate to the spaced etch stops includes forming a second portion of the opening.

Method of forming substrate for fluid ejection device

Tunnel-junction structures are fabricated by any of a set of related methods that form two or more tunnel junctions simultaneously. The fabrication methods disclosed are compatible with conventional CMOS fabrication practices, including both single damascene and dual damascene processes. The simultaneously formed tunnel junctions may have different areas. In some embodiments, tub-well structures are formed with sloped sidewalls. In some embodiments, an oxide-metal-oxide film stack on the sidewall of a tub-well is etched to form the tunnel junctions. Memory circuits, other integrated circuit structures, substrates carrying microelectronics, and other electronic devices made by the methods are disclosed.

Tunnel-junction structures and methods

A method of manufacturing a slotted substrate includes forming a masking layer over a first surface of a substrate, and patterning and etching the masking layer to form a hole therethrough. The first layer is deposited over the masking layer and in the hole. The first layer is patterned and etched to form a plug in the hole. A second surface of the substrate that is opposite the first surface is continuously etched until a bottom surface of the plug is substantially exposed and a slot in the substrate is substantially formed.

Slotted substrate and slotting process

A substrate for a fluid ejection device includes a first side, a second side opposite the first side, spaced etch stops extending into the substrate from the first side, and a fluidic channel communicating with the first side and the second side, wherein a first portion of the fluidic channel extends from the first side toward the second side between the spaced etch stops and a second portion of the fluidic channel extends from the second side toward the first side to the spaced etch stops.

Substrate for fluid ejection device

Described herein is a monolithic printhead formed using integrated circuit techniques. Thin film layers, including a resistive layer, are formed on a top surface of a silicon substrate. The various layers are etched to provide heater resistors and conductors. The thin film layers are also etched to expose portions of the upper surface of the substrate where ink feed holes leading into ink chambers are to be formed. A trench is etched in the bottom surface of the substrate while leaving a relatively thin membrane of the substrate underlying the thin film layers. After the trench is formed and using a backside etch, ink feed holes are formed in the substrate membrane leading from the trench to the ink chambers. Ink channels are also formed in the substrate membrane leading to sides of the ink feed holes. These channels preferably have widths smaller than the widths of the ink feed holes. Ink particles or other particles which may clog an ink feed hole opening do not block the narrower channels leading to the sides of the ink feed holes. Various examples of such channels and ink feed holes are described to form a particle-tolerant printhead for use in an inkjet printer.

Growing community of inventors

Corvallis, OR, United States of America

Kenneth Michael Kramer